Part Details for BSM100GB120DN2 by Infineon Technologies AG
Overview of BSM100GB120DN2 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM100GB120DN2
BSM100GB120DN2 CAD Models
BSM100GB120DN2 Part Data Attributes
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BSM100GB120DN2
Infineon Technologies AG
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Datasheet
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BSM100GB120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 800 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 470 ns | |
Turn-on Time-Nom (ton) | 210 ns | |
VCEsat-Max | 3.2 V |
Alternate Parts for BSM100GB120DN2
This table gives cross-reference parts and alternative options found for BSM100GB120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | BSM100GB120DN2 vs CM150DY-24T |
1MBI200SA-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | BSM100GB120DN2 vs 1MBI200SA-120 |
MG600Q1US59A | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | BSM100GB120DN2 vs MG600Q1US59A |
MG600Q1US65H | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM100GB120DN2 vs MG600Q1US65H |
2MBI150SC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | BSM100GB120DN2 vs 2MBI150SC-120 |
MII150-12A4 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | BSM100GB120DN2 vs MII150-12A4 |
MG100Q2YS50A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM100GB120DN2 vs MG100Q2YS50A |
APTGT200U120D4 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | Microsemi Corporation | BSM100GB120DN2 vs APTGT200U120D4 |
FZ400R12KS4 | Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GB120DN2 vs FZ400R12KS4 |
MG100Q2YS51A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM100GB120DN2 vs MG100Q2YS51A |