Datasheets
BSM100GAL100D by:

Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel

Part Details for BSM100GAL100D by Siemens

Overview of BSM100GAL100D by Siemens

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Part Details for BSM100GAL100D

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BSM100GAL100D Part Data Attributes:

BSM100GAL100D Siemens
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BSM100GAL100D Siemens Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature CHOPPER SWITCH
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1000 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.2 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1000 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-on Time-Max (ton) 220 ns
Turn-on Time-Nom (ton) 180 ns
VCEsat-Max 3.3 V

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