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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88AH6156
|
Newark | Sic Mosfet, Dual N Channel, 1.2Kv, 80A Rohs Compliant: Yes |Rohm BSM080D12P2C008 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$345.5100 / $356.2000 | Buy Now |
DISTI #
BSM080D12P2C008-ND
|
DigiKey | SIC 2N-CH 1200V 80A MODULE Min Qty: 1 Lead time: 22 Weeks Container: Tray |
15 In Stock |
|
$329.6483 / $342.5300 | Buy Now |
DISTI #
BSM080D12P2C008
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 1200V 80A 4-Pin Case C Cardboard - Trays (Alt: BSM080D12P2C008) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 22 Weeks, 0 Days Container: Tray | 0 |
|
$331.4844 / $377.3822 | Buy Now |
DISTI #
755-BSM080D12P2C008
|
Mouser Electronics | Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V RoHS: Compliant | 13 |
|
$329.6400 / $342.4100 | Buy Now |
|
Future Electronics | SiC Power Module-1200V-80A RoHS: Compliant pbFree: Yes Min Qty: 12 Package Multiple: 12 Container: Tray | 0Tray |
|
$339.9900 | Buy Now |
|
Quest Components | 11 |
|
$498.8430 / $581.9835 | Buy Now | |
|
Ameya Holding Limited | SIC POWER MODULE-1200V-80A Min Qty: 1 | 4-Authorized Distributor |
|
$411.9000 / $465.1200 | Buy Now |
DISTI #
BSM080D12P2C008
|
Avnet Silica | Transistor MOSFET Array Dual N-CH 1200V 80A 4-Pin Case C Cardboard (Alt: BSM080D12P2C008) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 31 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 | 2 |
|
$332.5620 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 12 |
|
$332.5620 | Buy Now |
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BSM080D12P2C008
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
BSM080D12P2C008
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Date Of Intro | 2016-03-25 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | ISOLATED | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 80 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |