Datasheets
BSL806N by: Infineon Technologies AG

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for BSL806N by Infineon Technologies AG

Overview of BSL806N by Infineon Technologies AG

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Part Details for BSL806N

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BSL806N Part Data Attributes

BSL806N Infineon Technologies AG
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BSL806N Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Drain Current-Max (ID) 2.3 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Surface Mount YES

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