Part Details for BSL316CL6327HTSA1 by Infineon Technologies AG
Overview of BSL316CL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for BSL316CL6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N/P-CH 30V TSOP-6 | 7000 |
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RFQ |
Part Details for BSL316CL6327HTSA1
BSL316CL6327HTSA1 CAD Models
BSL316CL6327HTSA1 Part Data Attributes
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BSL316CL6327HTSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSL316CL6327HTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP | |
| Package Description | GREEN, PLASTIC, TSOP-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSL316CL6327HTSA1
This table gives cross-reference parts and alternative options found for BSL316CL6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL316CL6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC6327C | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | BSL316CL6327HTSA1 vs FDC6327C |
| FDC6327C | 2700mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | BSL316CL6327HTSA1 vs FDC6327C |
| FDC6333C | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | BSL316CL6327HTSA1 vs FDC6333C |
| SI3585CDV-T1-GE3 | TRANSISTOR 3900 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | BSL316CL6327HTSA1 vs SI3585CDV-T1-GE3 |
| SI3588DV-T1-E3 | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Intertechnologies | BSL316CL6327HTSA1 vs SI3588DV-T1-E3 |
| FDC6321C | Dual N & P Channel Digital FET 25V, 3000-REEL | onsemi | BSL316CL6327HTSA1 vs FDC6321C |
| IRF5851TR | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | International Rectifier | BSL316CL6327HTSA1 vs IRF5851TR |
| SI3588DV-T1-E3 | TRANSISTOR 2500 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | BSL316CL6327HTSA1 vs SI3588DV-T1-E3 |
| FDC6321C | 0.68mA, 25V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | BSL316CL6327HTSA1 vs FDC6321C |
| BSL308CL6327HTSA1 | Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 | Infineon Technologies AG | BSL316CL6327HTSA1 vs BSL308CL6327HTSA1 |