Datasheets
BSL296SNH6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 1.4A I(D), 100V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

Part Details for BSL296SNH6327XTSA1 by Infineon Technologies AG

Overview of BSL296SNH6327XTSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BSL296SNH6327XTSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics BSL296 - 250V-600V Small Signal/Small Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 108300
  • 1 $0.1944
  • 25 $0.1905
  • 100 $0.1827
  • 500 $0.1750
  • 1,000 $0.1652
$0.1652 / $0.1944 Buy Now
DISTI # BSL296SNH6327XTSA1
TME Transistor: N-MOSFET, unipolar, 100V, 1.4A, 2W, TSOP6, ESD Min Qty: 3 0
  • 3 $0.3610
  • 25 $0.3250
  • 250 $0.2870
  • 1,000 $0.2500
  • 3,000 $0.2320
$0.2320 / $0.3610 RFQ

Part Details for BSL296SNH6327XTSA1

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BSL296SNH6327XTSA1 Part Data Attributes

BSL296SNH6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
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BSL296SNH6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 1.4A I(D), 100V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 15 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.56 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 5.6 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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