Datasheets
BSH112 by:

TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal

Part Details for BSH112 by NXP Semiconductors

Overview of BSH112 by NXP Semiconductors

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Price & Stock for BSH112

Part # Distributor Description Stock Price Buy
Quest Components   24000
  • 1 $0.5000
  • 8,001 $0.0875
  • 18,287 $0.0750
$0.0750 / $0.5000 Buy Now
Win Source Electronics N-channel enhancement mode field-effect transistor 206000
  • 345 $0.1460
  • 835 $0.1200
  • 1,295 $0.1160
  • 1,790 $0.1120
  • 2,295 $0.1090
  • 3,095 $0.0970
$0.0970 / $0.1460 Buy Now

Part Details for BSH112

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BSH112 Part Data Attributes

BSH112 NXP Semiconductors
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BSH112 NXP Semiconductors TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description MINIATURE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer NXP
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.83 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSH112

This table gives cross-reference parts and alternative options found for BSH112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSH112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSH112T/R Small Signal Field-Effect Transistor Nexperia BSH112 vs BSH112T/R
BSH112T/R TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSH112 vs BSH112T/R
934056035235 TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal NXP Semiconductors BSH112 vs 934056035235
BSH112/T3 TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSH112 vs BSH112/T3
BSH112 Small Signal Field-Effect Transistor Nexperia BSH112 vs BSH112
BSH112,235 BSH112 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin NXP Semiconductors BSH112 vs BSH112,235
Part Number Description Manufacturer Compare
DN2535N3-G Small Signal Field-Effect Transistor, 0.12A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSH112 vs DN2535N3-G
MMBF170 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN Fairchild Semiconductor Corporation BSH112 vs MMBF170
BSS123,215 BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin NXP Semiconductors BSH112 vs BSS123,215
BSS131E-6327 100mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Infineon Technologies AG BSH112 vs BSS131E-6327
TP2104N3-G Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSH112 vs TP2104N3-G
TN5325N3-G Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSH112 vs TN5325N3-G
2N7002 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 NXP Semiconductors BSH112 vs 2N7002
PMV117EN TRANSISTOR 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSH112 vs PMV117EN
TN0610N3-G Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN Supertex Inc BSH112 vs TN0610N3-G
BSS123 150mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors BSH112 vs BSS123

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