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Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8343
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Newark | Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:50A, Continuous Drain Current Id P Channel:50A Rohs Compliant: Yes |Infineon BSG0811NDATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 162 |
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$1.3500 / $2.8400 | Buy Now |
DISTI #
BSG0811NDATMA1CT-ND
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DigiKey | MOSFET 2N-CH 25V 19A/41A TISON8 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3372 In Stock |
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$1.1890 / $2.7400 | Buy Now |
DISTI #
BSG0811NDATMA1
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Avnet Americas | Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$1.4255 | Buy Now |
DISTI #
726-BSG0811NDATMA1
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Mouser Electronics | MOSFET TRENCH <= 40V RoHS: Compliant | 256 |
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$1.1800 / $2.6100 | Buy Now |
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Future Electronics | Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$1.1900 | Buy Now |
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Rochester Electronics | BSG0811 -Dual N-Channel OptiMOS MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 21 |
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$1.1400 / $1.3400 | Buy Now |
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Ameya Holding Limited | Min Qty: 5000 | 3410 |
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$2.0071 / $2.2301 | Buy Now |
DISTI #
SP001075902
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EBV Elektronik | Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R (Alt: SP001075902) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 25V 2.5W 3m10V20A 2V250uA 2 N-Channel TISON-8 MOSFETs ROHS | 50 |
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$2.0870 / $3.0604 | Buy Now |
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Win Source Electronics | MOSFET 2N-CH 25V 19A/41A 8TISON / Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8 | 38299 |
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$0.8480 / $1.2720 | Buy Now |
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BSG0811NDATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSG0811NDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N7 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |