Part Details for BSC884N03MSG by Infineon Technologies AG
Overview of BSC884N03MSG by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for BSC884N03MSG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSC884N03MSG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 799 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
14149 In Stock |
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$0.3800 | Buy Now |
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Rochester Electronics | BSC884N03 - Power Field-Effect Transistor, 17A, 34V, 0.0054ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 14149 |
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$0.3223 / $0.3792 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 40 |
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$1.5000 / $2.3100 | Buy Now |
Part Details for BSC884N03MSG
BSC884N03MSG CAD Models
BSC884N03MSG Part Data Attributes
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BSC884N03MSG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC884N03MSG
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 35 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 34 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC884N03MSG
This table gives cross-reference parts and alternative options found for BSC884N03MSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC884N03MSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDMS8670S | 20A, 30V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN | Rochester Electronics LLC | BSC884N03MSG vs FDMS8670S |
| FDMS8670 | 30V N-Channel Power Trench® MOSFET, 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM, 3000/TAPE REEL | Fairchild Semiconductor Corporation | BSC884N03MSG vs FDMS8670 |
| BSC090N03MSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC090N03MSG |
| BSC120N03MSGATMA1 | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC120N03MSGATMA1 |
| BSC0902NSATMA1 | Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC0902NSATMA1 |
| BSC028N03LSCG | Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC028N03LSCG |
| BSC043N03MSCG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC043N03MSCG |
| BSC050N03MSG | Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC050N03MSG |
| BSC028N03MSCG | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC028N03MSCG |
| BSC030N03MSG | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC884N03MSG vs BSC030N03MSG |