Part Details for BSC670N25NSFD by Infineon Technologies AG
Overview of BSC670N25NSFD by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC670N25NSFD
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TMOS2339
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Rutronik | N-CH 250V 24A 67mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel |
Stock DE - 5000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.4300 | Buy Now |
Part Details for BSC670N25NSFD
BSC670N25NSFD CAD Models
BSC670N25NSFD Part Data Attributes:
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BSC670N25NSFD
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC670N25NSFD
Infineon Technologies AG
Power Field-Effect Transistor, 24A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 69 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.067 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.4 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 96 A | |
Reference Standard | IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC670N25NSFD
This table gives cross-reference parts and alternative options found for BSC670N25NSFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC670N25NSFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC670N25NSFDATMA1 | Power Field-Effect Transistor, 24A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 | Infineon Technologies AG | BSC670N25NSFD vs BSC670N25NSFDATMA1 |
SIR692DP-T1-RE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | BSC670N25NSFD vs SIR692DP-T1-RE3 |