Part Details for BSC600N25NS3G by Infineon Technologies AG
Overview of BSC600N25NS3G by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC600N25NS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73928874
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RS | Transistor, MOSFET, N-channel normal level, 250V, 25A, 60mOhm, TDSON8 | Infineon BSC600N25NS3G RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 5 |
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$1.8600 / $2.1100 | Buy Now |
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DISTI #
69808081
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Verical | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R Min Qty: 29 Package Multiple: 1 Date Code: 2301 | Americas - 5000 |
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$2.2012 / $2.6857 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4000 |
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$2.6625 / $5.3250 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 4672 |
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$1.6400 / $2.0300 | Buy Now |
Part Details for BSC600N25NS3G
BSC600N25NS3G CAD Models
BSC600N25NS3G Part Data Attributes
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BSC600N25NS3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC600N25NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC600N25NS3G
This table gives cross-reference parts and alternative options found for BSC600N25NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC600N25NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB600N25N3GATMA1 | Infineon Technologies AG | $2.0020 | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | BSC600N25NS3G vs IPB600N25N3GATMA1 |
| BSC600N25NS3GATMA1 | Infineon Technologies AG | $2.1579 | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC600N25NS3G vs BSC600N25NS3GATMA1 |