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Part Details for BSC123N10LSGATMA1 by Infineon Technologies AG
Overview of BSC123N10LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC123N10LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
52R3478
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Newark | Mosfet, N Channel, 100V, 7A, Pg-Tsdson-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:71A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.85V Rohs Compliant: Yes |Infineon BSC123N10LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 29730 |
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$0.8390 / $1.8900 | Buy Now |
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DISTI #
BSC123N10LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 10.6/71A 8TDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17087 In Stock |
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$0.8159 / $1.9400 | Buy Now |
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DISTI #
BSC123N10LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC123N10LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.7615 / $0.8702 | Buy Now |
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DISTI #
726-BSC123N10LSGATMA
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Mouser Electronics | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 RoHS: Compliant | 14826 |
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$0.8150 / $1.4400 | Buy Now |
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DISTI #
V72:2272_06383309
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Arrow Electronics | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2310 Container: Cut Strips | Americas - 2450 |
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$0.7264 / $0.9789 | Buy Now |
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Future Electronics | Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.7150 | Buy Now |
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Future Electronics | Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$0.7150 | Buy Now |
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DISTI #
67539524
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Verical | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP T/R Min Qty: 9 Package Multiple: 1 Date Code: 2310 | Americas - 2450 |
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$0.7264 / $0.9789 | Buy Now |
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Ameya Holding Limited | Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8 | 7413 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 100V 71A TDSON-8 | 52000 |
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RFQ |
Part Details for BSC123N10LSGATMA1
BSC123N10LSGATMA1 CAD Models
BSC123N10LSGATMA1 Part Data Attributes
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BSC123N10LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC123N10LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 155 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10.6 A | |
| Drain-source On Resistance-Max | 0.0123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 284 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC123N10LSGATMA1
This table gives cross-reference parts and alternative options found for BSC123N10LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N10LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC118N10NSGATMA1 | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC123N10LSGATMA1 vs BSC118N10NSGATMA1 |