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Transistors / Power Field-Effect Transistors / BSC120N03MSGATMA1
Datasheets
BSC120N03MSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC120N03MSGATMA1 by Infineon Technologies AG

Overview of BSC120N03MSGATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BSC120N03MSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 60R2514
Newark Mosfet, N Channel, 30V, 39A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:39A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSC120N03MSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 17468
  • 1 $0.6550
  • 10 $0.5700
  • 100 $0.3940
  • 500 $0.3300
  • 1,000 $0.2800
  • 2,500 $0.2500
$0.2500 / $0.6550 Buy Now
DISTI # BSC120N03MSGATMA1CT-ND
DigiKey MOSFET N-CH 30V 11A/39A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 28583
In Stock
  • 1 $0.6300
  • 10 $0.5480
  • 100 $0.3795
  • 500 $0.3171
  • 1,000 $0.2699
  • 2,000 $0.2404
  • 5,000 $0.2277
  • 10,000 $0.2108
  • 25,000 $0.2087
$0.2087 / $0.6300 Buy Now
DISTI # BSC120N03MSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 11A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC120N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2227
  • 10,000 $0.2158
  • 20,000 $0.2088
  • 30,000 $0.2018
  • 40,000 $0.1949
$0.1949 / $0.2227 Buy Now
DISTI # 726-BSC120N03MSGATMA
Mouser Electronics MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M RoHS: Compliant 17008
  • 1 $0.6300
  • 10 $0.5430
  • 100 $0.3740
  • 500 $0.3170
  • 1,000 $0.2210
  • 2,500 $0.2190
  • 5,000 $0.2100
  • 10,000 $0.2080
$0.2080 / $0.6300 Buy Now
DISTI # E02:0323_00171440
Arrow Electronics Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Europe - 10000
  • 5,000 $0.1800
$0.1800 Buy Now
DISTI # V72:2272_06391051
Arrow Electronics Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2231 Container: Cut Strips Americas - 2471
  • 1 $0.3238
  • 10 $0.3050
  • 25 $0.3019
  • 100 $0.2598
  • 250 $0.2575
  • 500 $0.2375
  • 1,000 $0.1833
$0.1833 / $0.3238 Buy Now
Future Electronics Single N-Channel 30 V 12 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 20000
Reel
  • 5,000 $0.1880
  • 10,000 $0.1840
  • 15,000 $0.1820
  • 20,000 $0.1810
  • 25,000 $0.1760
$0.1760 / $0.1880 Buy Now
Future Electronics Single N-Channel 30 V 12 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 10000
Reel
  • 5,000 $0.1760
  • 10,000 $0.1720
  • 15,000 $0.1700
  • 20,000 $0.1690
  • 25,000 $0.1650
$0.1650 / $0.1760 Buy Now
DISTI # 69266862
Verical Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 93 Package Multiple: 1 Date Code: 2245 Americas - 22307
  • 93 $0.3375
  • 100 $0.3138
  • 200 $0.3125
  • 500 $0.2638
  • 1,000 $0.2500
  • 2,000 $0.2475
  • 5,000 $0.2250
  • 10,000 $0.2113
  • 20,000 $0.2075
$0.2075 / $0.3375 Buy Now
DISTI # 30577313
Verical Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 45 Package Multiple: 1 Americas - 10000
  • 45 $0.7088
  • 67 $0.4725
  • 100 $0.4275
  • 200 $0.4263
  • 500 $0.3600
  • 1,000 $0.3400
  • 2,000 $0.3375
  • 5,000 $0.2475
  • 10,000 $0.2463
$0.2463 / $0.7088 Buy Now
DISTI # 19293286
Verical Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Americas - 10000
  • 5,000 $0.1793
$0.1793 Buy Now
DISTI # 69127068
Verical Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R Min Qty: 33 Package Multiple: 1 Date Code: 2231 Americas - 2471
  • 33 $0.3019
  • 100 $0.2598
  • 250 $0.2575
  • 500 $0.2375
  • 1,000 $0.1833
$0.1833 / $0.3019 Buy Now
DISTI # BSC120N03MSGATMA1
TME Transistor: N-MOSFET, unipolar, 30V, 36A, 28W, PG-TDSON-8 Min Qty: 3 0
  • 3 $0.5350
  • 25 $0.4740
  • 100 $0.3990
  • 250 $0.3580
  • 1,000 $0.3330
$0.3330 / $0.5350 RFQ
Chip1Cloud MOSFET N-CH 30V 39A TDSON-8 21000
RFQ
DISTI # C1S322000076969
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 10000
  • 5 $0.5670
  • 50 $0.3780
  • 100 $0.3420
  • 200 $0.3410
  • 500 $0.2880
  • 1,000 $0.2720
  • 2,000 $0.2700
  • 5,000 $0.1980
  • 10,000 $0.1970
$0.1970 / $0.5670 Buy Now
DISTI # C1S322000840337
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 22307
  • 5 $0.4050
  • 50 $0.2700
  • 100 $0.2510
  • 200 $0.2500
  • 500 $0.2110
  • 1,000 $0.2000
  • 2,000 $0.1980
  • 5,000 $0.1800
  • 10,000 $0.1690
  • 20,000 $0.1660
$0.1660 / $0.4050 Buy Now
CHIPMALL.COM LIMITED Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration power stage 5x6 464
  • 1 $0.3557
$0.3557 Buy Now
DISTI # SP000311516
EBV Elektronik Trans MOSFET N-CH 30V 11A 8-Pin TDSON T/R (Alt: SP000311516) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 30000
  • 5,000 $0.2514
  • 30,000 $0.2347
$0.2347 / $0.2514 Buy Now

Part Details for BSC120N03MSGATMA1

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BSC120N03MSGATMA1 Part Data Attributes

Parametric Data
BSC120N03MSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC120N03MSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 156 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC120N03MSGATMA1

This table gives cross-reference parts and alternative options found for BSC120N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC120N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDMS8670S 20A, 30V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN Rochester Electronics LLC BSC120N03MSGATMA1 vs FDMS8670S
FDMS8670 30V N-Channel Power Trench® MOSFET, 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM, 3000/TAPE REEL Fairchild Semiconductor Corporation BSC120N03MSGATMA1 vs FDMS8670
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC090N03MSG
BSC0902NSATMA1 Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC0902NSATMA1
BSC028N03LSCG Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC028N03LSCG
BSC043N03MSCG Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC043N03MSCG
BSC050N03MSG Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC050N03MSG
BSC028N03MSCG Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC028N03MSCG
BSC030N03MSG Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC030N03MSG
BSC057N03MSGATMA1 Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC120N03MSGATMA1 vs BSC057N03MSGATMA1

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