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Transistors / Power Field-Effect Transistors / BSC119N03MSCG
Datasheets
BSC119N03MSCG by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC119N03MSCG by Infineon Technologies AG

Results Overview of BSC119N03MSCG by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

BSC119N03MSCG Information

BSC119N03MSCG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC119N03MSCG

Part # Distributor Description Stock Price Buy
Vyrian Transistors 159625
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Part Details for BSC119N03MSCG

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BSC119N03MSCG Part Data Attributes

Parametric Data
BSC119N03MSCG Infineon Technologies AG
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BSC119N03MSCG Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0119 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 156 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC119N03MSCG

This table gives cross-reference parts and alternative options found for BSC119N03MSCG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC119N03MSCG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC119N03LSCG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC119N03MSCG vs BSC119N03LSCG
BSC105N10LSFG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC119N03MSCG vs BSC105N10LSFG

BSC119N03MSCG Related Parts

BSC119N03MSCG Frequently Asked Questions (FAQ)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal design guidelines for the BSC119N03MSCG. It's essential to follow these guidelines to ensure optimal performance, thermal management, and reliability.

  • When selecting a gate driver for the BSC119N03MSCG, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating that matches the MOSFET's gate-source voltage. The 1EDC and 2EDC families from Infineon are suitable options.

  • The BSC119N03MSCG's SOA is not explicitly stated in the datasheet. However, Infineon provides a dedicated SOA application note (AN2015-05) that outlines the SOA limitations for this device. It's essential to understand these limitations to ensure the device operates within a safe region and to prevent damage or premature failure.

  • The BSC119N03MSCG's body diode can be a concern during switching transitions. To minimize the impact, use a gate driver with a dedicated diode emulation feature or add an external diode in parallel with the MOSFET. This helps to reduce the diode's recovery time and prevent unwanted voltage spikes.

  • Infineon provides a dedicated soldering and assembly guide (AN2013-03) that outlines the recommended procedures for the BSC119N03MSCG. It's essential to follow these guidelines to ensure reliable connections, prevent damage, and maintain the device's performance.