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Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3311
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Newark | Mosfet, N Channel, 60V, 50A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSC100N06LS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 94463 |
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$0.3630 / $0.4290 | Buy Now |
DISTI #
BSC100N06LS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 12A/50A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17540 In Stock |
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$0.4200 / $1.3200 | Buy Now |
DISTI #
BSC100N06LS3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC100N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 50000 |
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RFQ | |
DISTI #
47W3311
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Avnet Americas | Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Bulk (Alt: 47W3311) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 15340 Partner Stock |
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$0.5120 / $1.1600 | Buy Now |
DISTI #
726-BSC100N06LS3GATM
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Mouser Electronics | MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 23254 |
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$0.4200 / $1.1600 | Buy Now |
DISTI #
E02:0323_00171382
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Arrow Electronics | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks Date Code: 2436 | Europe - 20000 |
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$0.3851 / $0.3889 | Buy Now |
DISTI #
V36:1790_06384852
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Arrow Electronics | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks Date Code: 2424 | Americas - 5000 |
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$0.3556 / $0.3591 | Buy Now |
DISTI #
V72:2272_06384852
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Arrow Electronics | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2408 Container: Cut Strips | Americas - 1041 |
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$0.3775 / $1.0909 | Buy Now |
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Future Electronics | Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 180000Reel |
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$0.3600 / $0.3800 | Buy Now |
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Future Electronics | Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 10000Reel |
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$0.3600 / $0.3800 | Buy Now |
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BSC100N06LS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC100N06LS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 22 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC100N06LS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC100N06LS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC046N02KSG | Power Field-Effect Transistor, 19A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC100N06LS3GATMA1 vs BSC046N02KSG |
BSC028N06LS3G | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC100N06LS3GATMA1 vs BSC028N06LS3G |