Datasheets
BSC090N03MSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC090N03MSGATMA1 by Infineon Technologies AG

Overview of BSC090N03MSGATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BSC090N03MSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # V79:2366_28731553
Arrow Electronics Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Date Code: 2131 Americas - 5000
  • 1 $0.4503
$0.4503 Buy Now
DISTI # 77373254
Verical Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R Min Qty: 33 Package Multiple: 1 Date Code: 2131 Americas - 5000
  • 33 $0.4503
$0.4503 Buy Now
Rochester Electronics BSC090N03 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 3649
  • 1 $0.2626
  • 25 $0.2573
  • 100 $0.2468
  • 500 $0.2363
  • 1,000 $0.2232
$0.2232 / $0.2626 Buy Now
Chip1Cloud MOSFET N-CH 30V 48A TDSON-8 116400
RFQ

Part Details for BSC090N03MSGATMA1

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BSC090N03MSGATMA1 Part Data Attributes

BSC090N03MSGATMA1 Infineon Technologies AG
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BSC090N03MSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0112 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 192 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC090N03MSGATMA1

This table gives cross-reference parts and alternative options found for BSC090N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC090N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC090N03MSG
Part Number Description Manufacturer Compare
FDMS8670S 20A, 30V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN Rochester Electronics LLC BSC090N03MSGATMA1 vs FDMS8670S
FDMS8670 30V N-Channel Power Trench® MOSFET, 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM, 3000/TAPE REEL Fairchild Semiconductor Corporation BSC090N03MSGATMA1 vs FDMS8670
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC090N03MSG
BSC120N03MSGATMA1 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC120N03MSGATMA1
BSC0902NSATMA1 Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC0902NSATMA1
BSC028N03LSCG Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC028N03LSCG
BSC043N03MSCG Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC043N03MSCG
BSC050N03MSG Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC050N03MSG
BSC028N03MSCG Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC028N03MSCG
BSC030N03MSG Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03MSGATMA1 vs BSC030N03MSG

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