Part Details for BSC0909NSATMA1 by Infineon Technologies AG
Overview of BSC0909NSATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for BSC0909NSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC9447
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Newark | Mosfet, N-Ch, 34V, 44A, Tdson, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:34V, On Resistance Rds(On):0.0077Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Infineon BSC0909NSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 250 |
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$0.3030 / $0.6610 | Buy Now |
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DISTI #
BSC0909NSATMA1CT-ND
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DigiKey | MOSFET N-CH 34V 12A/44A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10805 In Stock |
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$0.1980 / $0.9600 | Buy Now |
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DISTI #
BSC0909NSATMA1
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Avnet Americas | Trans MOSFET N-CH 34V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC0909NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Future Electronics | N-Channel 30 V 44 A 9.2 mΩ 15 nC SMT OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.1650 / $0.1760 | Buy Now |
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Future Electronics | N-Channel 30 V 44 A 9.2 mΩ 15 nC SMT OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.1650 / $0.1760 | Buy Now |
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DISTI #
69741549
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Verical | Trans MOSFET N-CH 34V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2314 | Americas - 70000 |
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$0.2125 | Buy Now |
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DISTI #
77265477
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Verical | Trans MOSFET N-CH 34V 12A 8-Pin TDSON EP T/R Min Qty: 29 Package Multiple: 1 Date Code: 2349 | Americas - 8800 |
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$0.2488 / $1.1150 | Buy Now |
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DISTI #
19774044
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Verical | Trans MOSFET N-CH 34V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 | Americas - 5000 |
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$0.1699 / $0.1820 | Buy Now |
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DISTI #
BSC0909NSATMA1
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TME | Transistor: N-MOSFET, unipolar, 34V, 44A, 27W, PG-TDSON-8 Min Qty: 3 | 664 |
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$0.2240 / $0.3210 | Buy Now |
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DISTI #
C1S322000406780
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 8800 |
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$0.2030 / $0.8920 | Buy Now |
Part Details for BSC0909NSATMA1
BSC0909NSATMA1 CAD Models
BSC0909NSATMA1 Part Data Attributes
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BSC0909NSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0909NSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0091 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 176 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC0909NSATMA1
This table gives cross-reference parts and alternative options found for BSC0909NSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0909NSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC0909NS | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC0909NSATMA1 vs BSC0909NS |