Part Details for BSC0906NS by Infineon Technologies AG
Results Overview of BSC0906NS by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSC0906NS Information
BSC0906NS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC0906NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSC0906NS
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Mouser Electronics | MOSFETs N-Ch 30V 63A TDSON-8 OptiMOS RoHS: Compliant | 6749 |
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$0.1760 / $0.7800 | Buy Now |
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Bristol Electronics | 11727 |
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RFQ | ||
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Bristol Electronics | 147 |
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RFQ | ||
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Quest Components | 9381 |
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$0.2664 / $0.8880 | Buy Now | |
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LCSC | 30V 63A 4.5m10V30A 2V TDSON-8-EP(5x6) MOSFETs ROHS | 4285 |
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$0.1133 / $0.2417 | Buy Now |
Part Details for BSC0906NS
BSC0906NS CAD Models
BSC0906NS Part Data Attributes
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BSC0906NS
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0906NS
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Select a part to compare: |
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 14 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 252 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC0906NS
This table gives cross-reference parts and alternative options found for BSC0906NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0906NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC0906NSE8189 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC0906NS vs BSC0906NSE8189 |
| SI7328DN-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18.9A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8 | BSC0906NS vs SI7328DN-T1-GE3 |
| BSC0906NSATMA1 | Infineon Technologies AG | $0.3770 | Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC0906NS vs BSC0906NSATMA1 |
BSC0906NS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
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The device requires a stable input voltage (VIN) and a proper biasing of the gate driver (VCC) to ensure optimal performance. A decoupling capacitor (e.g., 100nF) should be placed close to the VIN pin, and a separate power supply or a voltage regulator should be used for VCC.
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The maximum allowed parasitic inductance in the drain-source loop is approximately 5nH. Exceeding this value may lead to ringing and oscillations, affecting the device's performance and reliability.
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A transient voltage suppressor (TVS) or a zener diode can be used to protect the device from overvoltage conditions. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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A gate resistance (RG) of 10-20 ohms is recommended for optimal switching performance. A lower RG can lead to faster switching times, but may also increase power losses.