Part Details for BSC0904NSIATMA1 by Infineon Technologies AG
Overview of BSC0904NSIATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC0904NSIATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
86AK4465
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Newark | Mosfet, N-Ch, 30V, 78A, Tdson Rohs Compliant: Yes |Infineon BSC0904NSIATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3020 / $0.3170 | Buy Now |
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DISTI #
BSC0904NSIATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 20A/78A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
29587 In Stock |
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$0.2904 / $0.6200 | Buy Now |
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DISTI #
BSC0904NSIATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP - Tape and Reel (Alt: BSC0904NSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2709 / $0.3096 | Buy Now |
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DISTI #
E02:0323_03079005
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Arrow Electronics | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2222 | Europe - 5000 |
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$0.2488 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.2850 / $0.2950 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.2850 / $0.2950 | Buy Now |
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DISTI #
62245499
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Verical | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2221 | Americas - 125000 |
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$0.3115 | Buy Now |
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DISTI #
66415967
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Verical | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2222 | Americas - 5000 |
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$0.2494 | Buy Now |
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DISTI #
79931070
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Verical | Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP T/R Min Qty: 73 Package Multiple: 1 Date Code: 2412 | Americas - 4975 |
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$0.3413 / $0.4300 | Buy Now |
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Rochester Electronics | BSC0904 - OptiMOS 30V in SuperSO8 package RoHS: Compliant Status: Active Min Qty: 1 | 260 |
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$0.2880 / $0.3388 | Buy Now |
Part Details for BSC0904NSIATMA1
BSC0904NSIATMA1 CAD Models
BSC0904NSIATMA1 Part Data Attributes:
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BSC0904NSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0904NSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 14 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 312 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC0904NSIATMA1
This table gives cross-reference parts and alternative options found for BSC0904NSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0904NSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STL100NHS3LL | 22A, 30V, 0.0057ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | STMicroelectronics | BSC0904NSIATMA1 vs STL100NHS3LL |
| BSC0904NSI | Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC0904NSIATMA1 vs BSC0904NSI |
| DMT34M1LPS-13 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSC0904NSIATMA1 vs DMT34M1LPS-13 |
| STSJ100NHS3LL | 20A, 30V, 0.0057ohm, N-CHANNEL, Si, POWER, MOSFET, POWERSOP-8 | STMicroelectronics | BSC0904NSIATMA1 vs STSJ100NHS3LL |
| SISA14DN-T1-GE3 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | Vishay Intertechnologies | BSC0904NSIATMA1 vs SISA14DN-T1-GE3 |