Datasheets
BSC0902NSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC0902NSATMA1 by Infineon Technologies AG

Overview of BSC0902NSATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BSC0902NSATMA1

Part # Distributor Description Stock Price Buy
DISTI # BSC0902NSATMA1CT-ND
DigiKey MOSFET N-CH 30V 24A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 11038
In Stock
  • 1 $1.1600
  • 10 $0.9520
  • 100 $0.7404
  • 500 $0.6276
  • 1,000 $0.5113
  • 2,000 $0.4813
  • 5,000 $0.4584
  • 10,000 $0.4372
$0.4372 / $1.1600 Buy Now
DISTI # BSC0902NSATMA1
Avnet Americas Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP - Tape and Reel (Alt: BSC0902NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4654
  • 10,000 $0.4509
  • 20,000 $0.4364
  • 30,000 $0.4218
  • 40,000 $0.4073
$0.4073 / $0.4654 Buy Now
DISTI # 726-BSC0902NSATMA1
Mouser Electronics MOSFET N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant 4109
  • 1 $1.1500
  • 10 $0.9390
  • 100 $0.7200
  • 500 $0.6120
  • 1,000 $0.4480
  • 2,500 $0.4440
  • 5,000 $0.4360
$0.4360 / $1.1500 Buy Now
DISTI # E02:0323_02823317
Arrow Electronics Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2411 Europe - 40000
  • 5,000 $0.4037
  • 10,000 $0.3998
  • 25,000 $0.3944
$0.3944 / $0.4037 Buy Now
DISTI # V72:2272_06384371
Arrow Electronics Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2219 Container: Cut Strips Americas - 4690
  • 1 $1.1206
  • 10 $0.9181
  • 25 $0.9031
  • 100 $0.6901
  • 250 $0.6832
  • 500 $0.5838
  • 1,000 $0.4161
  • 3,000 $0.4022
$0.4022 / $1.1206 Buy Now
Future Electronics Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.4100
  • 10,000 $0.3950
$0.3950 / $0.4100 Buy Now
Future Electronics Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.4100
  • 10,000 $0.3950
$0.3950 / $0.4100 Buy Now
DISTI # 73477407
Verical Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2316 Americas - 45000
  • 5,000 $0.4683
$0.4683 Buy Now
DISTI # 79056109
Verical Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2411 Americas - 40000
  • 5,000 $0.4032
  • 10,000 $0.3993
  • 25,000 $0.3940
$0.3940 / $0.4032 Buy Now
DISTI # 69268209
Verical Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 41 Package Multiple: 1 Date Code: 2302 Americas - 10000
  • 41 $0.7650
  • 50 $0.6513
  • 100 $0.5575
  • 200 $0.5287
  • 500 $0.4950
  • 1,000 $0.4650
  • 5,000 $0.4088
  • 10,000 $0.3838
$0.3838 / $0.7650 Buy Now
DISTI # 62194787
Verical Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 16 Package Multiple: 1 Date Code: 2219 Americas - 4690
  • 16 $0.9181
  • 25 $0.9031
  • 100 $0.6901
  • 250 $0.6832
  • 500 $0.5838
  • 1,000 $0.4161
  • 3,000 $0.4022
$0.4022 / $0.9181 Buy Now
DISTI # 53488003
Verical Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R Min Qty: 97 Package Multiple: 1 Date Code: 2023 Americas - 1954
  • 97 $0.3250
  • 100 $0.3238
  • 200 $0.3188
$0.3188 / $0.3250 Buy Now
DISTI # BSC0902NSATMA1
TME Transistor: N-MOSFET, unipolar, 30V, 91A, 48W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.7610
  • 25 $0.5200
  • 100 $0.4180
  • 250 $0.3630
  • 1,000 $0.3380
$0.3380 / $0.7610 RFQ
Ameya Holding Limited Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8 5000
RFQ
DISTI # C1S322000897900
Chip1Stop Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 10000
  • 5 $0.8180
  • 10 $0.6120
  • 50 $0.5210
  • 100 $0.4460
  • 200 $0.4230
  • 500 $0.3960
  • 1,000 $0.3720
  • 5,000 $0.3270
  • 10,000 $0.3070
$0.3070 / $0.8180 Buy Now
DISTI # C1S322000192407
Chip1Stop Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 1954
  • 5 $0.2810
  • 10 $0.2680
  • 50 $0.2600
  • 100 $0.2590
  • 200 $0.2550
$0.2550 / $0.2810 Buy Now
DISTI # SP000800246
EBV Elektronik Trans MOSFET N-CH 30V 24A 8-Pin TDSON T/R (Alt: SP000800246) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC0902NSATMA1

BSC0902NSATMA1 CAD Models

BSC0902NSATMA1 Part Data Attributes

BSC0902NSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC0902NSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC0902NSATMA1

This table gives cross-reference parts and alternative options found for BSC0902NSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0902NSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC0902NS Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC0902NS
Part Number Description Manufacturer Compare
FDMS8670S 20A, 30V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN Rochester Electronics LLC BSC0902NSATMA1 vs FDMS8670S
FDMS8670 30V N-Channel Power Trench® MOSFET, 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM, 3000/TAPE REEL Fairchild Semiconductor Corporation BSC0902NSATMA1 vs FDMS8670
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC090N03MSG
BSC120N03MSGATMA1 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC120N03MSGATMA1
BSC028N03LSCG Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC028N03LSCG
BSC043N03MSCG Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC043N03MSCG
BSC050N03MSG Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC050N03MSG
BSC028N03MSCG Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC028N03MSCG
BSC030N03MSG Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC030N03MSG
BSC057N03MSGATMA1 Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC0902NSATMA1 vs BSC057N03MSGATMA1

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