-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSC084P03NS3GATMA1 by Infineon Technologies AG
Overview of BSC084P03NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC084P03NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
12AC9446
|
Newark | Mosfet, P-Ch, 30V, 78.6A, 150Deg C, 69W, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:78.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon BSC084P03NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 32 |
|
$0.4070 | Buy Now |
|
DISTI #
BSC084P03NS3GATMA1CT-ND
|
DigiKey | MOSFET P-CH 30V 14.9A 8TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7318 In Stock |
|
$0.4169 / $1.1100 | Buy Now |
|
DISTI #
BSC084P03NS3GATMA1
|
Avnet Americas | Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON EP - Tape and Reel (Alt: BSC084P03NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
|
$0.3884 / $0.4438 | Buy Now |
|
DISTI #
12AC9446
|
Avnet Americas | Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 12AC9446) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 32 Partner Stock |
|
$0.7020 / $1.0500 | Buy Now |
|
DISTI #
726-BSC084P03NS3GATM
|
Mouser Electronics | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 RoHS: Compliant | 7186 |
|
$0.4160 / $0.8400 | Buy Now |
|
DISTI #
E02:0323_00822361
|
Arrow Electronics | Trans MOSFET P-CH 30V 14.9A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2404 | Europe - 5000 |
|
$0.3951 / $0.3953 | Buy Now |
|
DISTI #
V72:2272_06384555
|
Arrow Electronics | Trans MOSFET P-CH 30V 14.9A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2309 Container: Cut Strips | Americas - 4740 |
|
$0.3718 / $0.5478 | Buy Now |
|
|
Future Electronics | Single P-Channel 30 V 8.4 mOhm 43 nC OptiMOS™ Power Mosfet- TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 5000Reel |
|
$0.3650 / $0.3800 | Buy Now |
|
|
Future Electronics | Single P-Channel 30 V 8.4 mOhm 43 nC OptiMOS™ Power Mosfet- TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 0Reel |
|
$0.3650 / $0.3800 | Buy Now |
|
|
Future Electronics | Single P-Channel 30 V 8.4 mOhm 43 nC OptiMOS™ Power Mosfet- TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$0.3650 / $0.3800 | Buy Now |
Part Details for BSC084P03NS3GATMA1
BSC084P03NS3GATMA1 CAD Models
BSC084P03NS3GATMA1 Part Data Attributes
|
|
BSC084P03NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC084P03NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 105 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14.9 A | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 160 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 62.2 ns | |
| Turn-on Time-Max (ton) | 224.9 ns |
Alternate Parts for BSC084P03NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC084P03NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC084P03NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC084P03NS3EGATMA1 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC084P03NS3GATMA1 vs BSC084P03NS3EGATMA1 |
| BSC084P03NS3G | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC084P03NS3GATMA1 vs BSC084P03NS3G |