Part Details for BSC079N10NSGATMA1 by Infineon Technologies AG
Overview of BSC079N10NSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for BSC079N10NSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
BSC079N10NSGATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 13.4A 8TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4710 In Stock |
|
$1.3390 / $2.8700 | Buy Now |
|
DISTI #
BSC079N10NSGATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$1.2496 / $1.4282 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 7.9 mOhm 66 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$1.3200 | Buy Now |
|
DISTI #
79645341
|
Verical | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2348 | Americas - 35000 |
|
$1.4371 | Buy Now |
|
DISTI #
21782651
|
Verical | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 | Americas - 5000 |
|
$1.3514 | Buy Now |
|
DISTI #
BSC079N10NSGATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$1.2496 / $1.4282 | Buy Now |
|
|
Chip1Cloud | MOSFET N-CH 100V 100A TDSON-8 | 13500 |
|
RFQ | |
|
DISTI #
SP000379590
|
EBV Elektronik | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON T/R (Alt: SP000379590) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 2 Weeks, 5 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
1775453
|
Farnell | MOSFET, N CH, 100A, 100V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 8 Weeks, 0 Days Container: Each | 0 |
|
$1.9335 / $4.2538 | Buy Now |
Part Details for BSC079N10NSGATMA1
BSC079N10NSGATMA1 CAD Models
BSC079N10NSGATMA1 Part Data Attributes:
|
|
BSC079N10NSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC079N10NSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.4A I(D), 100V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 377 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13.4 A | |
| Drain-source On Resistance-Max | 0.0079 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC079N10NSGATMA1
This table gives cross-reference parts and alternative options found for BSC079N10NSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC079N10NSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC079N10NSG | Power Field-Effect Transistor, 13.4A I(D), 100V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC079N10NSGATMA1 vs BSC079N10NSG |