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Power Field-Effect Transistor, 90A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 141 |
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$0.6750 / $1.8000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.007OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5 |
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$1.2282 / $1.3350 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.007OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 112 |
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$0.9000 / $2.4000 | Buy Now |
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NexGen Digital | 1 |
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RFQ | ||
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Chip1Cloud | OptiMOSTM3 Power-Transistor | 6040 |
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RFQ | |
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CHIPMALL.COM LIMITED | 100V 90A 7m��@10V,50A 114W 3.5V@75uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS | 14951 |
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$0.5818 / $0.8967 | Buy Now |
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LCSC | 100V 90A 7m10V50A 114W 3.5V75uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS | 15062 |
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$0.5059 / $0.7797 | Buy Now |
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Win Source Electronics | OptiMOSTM3 Power-Transistor | 307690 |
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$1.2250 / $1.8370 | Buy Now |
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BSC070N10NS3G
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC070N10NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 92 A | |
Drain-source On Resistance-Max | 0.007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 21 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 114 W | |
Pulsed Drain Current-Max (IDM) | 368 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC070N10NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC070N10NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC070N10NS3GATMA1 | Power Field-Effect Transistor, 90A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC070N10NS3G vs BSC070N10NS3GATMA1 |