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Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3309
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Newark | Mosfet, N Channel, 60V, 50A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSC067N06LS3GATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7120 / $1.6200 | Buy Now |
DISTI #
98AK5417
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Newark | Mosfet, N-Channel, 60V, 50A, Supersot Rohs Compliant: Yes |Infineon BSC067N06LS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6090 / $0.6240 | Buy Now |
DISTI #
25AC6432
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Newark | Transitional Mosfets Rohs Compliant: Yes |Infineon BSC067N06LS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6240 | Buy Now |
DISTI #
BSC067N06LS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 15A/50A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8656 In Stock |
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$0.5861 / $1.5600 | Buy Now |
DISTI #
BSC067N06LS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC067N06LS3GATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 30000 |
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$0.5460 / $0.6240 | Buy Now |
DISTI #
BSC067N06LS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC067N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$0.5460 / $0.6240 | Buy Now |
DISTI #
726-BSC067N06LS3GATM
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Mouser Electronics | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 16518 |
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$0.5970 / $1.5600 | Buy Now |
DISTI #
E02:0323_00274302
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Arrow Electronics | Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2408 | Europe - 40000 |
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$0.5185 / $0.5264 | Buy Now |
DISTI #
V72:2272_06384552
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Arrow Electronics | Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2331 Container: Cut Strips | Americas - 5270 |
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$0.5535 / $1.5194 | Buy Now |
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Future Electronics | Single N-Channel 60 V 12.1 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 5000Reel |
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$0.2950 / $0.3100 | Buy Now |
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BSC067N06LS3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC067N06LS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 47 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0067 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |