Part Details for BSC067N06LS3G by Infineon Technologies AG
Overview of BSC067N06LS3G by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
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Price & Stock for BSC067N06LS3G
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans MOSFET N-CH 60V 15A Automotive 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor | 45000 |
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$0.3950 / $0.5100 | Buy Now |
Part Details for BSC067N06LS3G
BSC067N06LS3G CAD Models
BSC067N06LS3G Part Data Attributes
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BSC067N06LS3G
Infineon Technologies AG
Buy Now
Datasheet
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BSC067N06LS3G
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 47 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0067 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC067N06LS3G
This table gives cross-reference parts and alternative options found for BSC067N06LS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC067N06LS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC067N06LS3GATMA1 | Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC067N06LS3G vs BSC067N06LS3GATMA1 |
Resources and Additional Insights for BSC067N06LS3G
Reference Designs related to BSC067N06LS3G
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5W Adapter Reference Design
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15W Reference design for flyback Smart Phone/Tablet (5V/3A)
15W 5.0V high efficiency USB adapter reference design board using Infineon Quasi-Resonant PWM IC ICE2QS03G with CoolMOS™ IPS65R1K5CE (IPAK) and secondary side synchronous rectification IC with OptiMOS™ BSC067N06LS3 G (ThinPAK) in a small form factor, high efficiency and various mode of protections for a high reliable system.