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Power Field-Effect Transistor, 17A I(D), 40V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2496
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Newark | Mosfet, N Channel, 40V, 81A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:81A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC054N04NSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2250 |
|
$0.4110 / $0.9980 | Buy Now |
DISTI #
BSC054N04NSGATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 17A/81A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
30298 In Stock |
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$0.3588 / $0.9600 | Buy Now |
DISTI #
BSC054N04NSGATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 17A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC054N04NSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3349 / $0.3827 | Buy Now |
DISTI #
726-BSC054N04NSGATMA
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Mouser Electronics | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 RoHS: Compliant | 56748 |
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$0.3580 / $0.6400 | Buy Now |
DISTI #
E02:0323_00171272
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Arrow Electronics | Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2412 | Europe - 5000 |
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$0.3801 / $0.3877 | Buy Now |
DISTI #
V72:2272_06384762
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Arrow Electronics | Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2238 Container: Cut Strips | Americas - 3097 |
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$0.3067 / $0.3555 | Buy Now |
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Future Electronics | N-Channel 40 V 81 A 5.4 mΩ 26 nC SMT OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$0.3000 / $0.3100 | Buy Now |
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Future Electronics | N-Channel 40 V 81 A 5.4 mΩ 26 nC SMT OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$0.3000 / $0.3100 | Buy Now |
DISTI #
62525172
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Verical | Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R Min Qty: 46 Package Multiple: 1 Date Code: 2227 | Americas - 13693 |
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$0.3450 / $0.6875 | Buy Now |
DISTI #
80326811
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Verical | Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2412 | Americas - 5000 |
|
$0.4498 | Buy Now |
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BSC054N04NSGATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC054N04NSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 40V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 35 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 81 A | |
Drain-source On Resistance-Max | 0.0054 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 324 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |