Part Details for BSC0504NSIATMA1 by Infineon Technologies AG
Results Overview of BSC0504NSIATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
BSC0504NSIATMA1 Information
BSC0504NSIATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC0504NSIATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC2203
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Newark | Mosfet, N-Ch, 30V, 72A, Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:72A, ... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9082 |
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$0.3430 / $0.8420 | Buy Now |
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DISTI #
BSC0504NSIATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 21A/72A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10245 In Stock |
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$0.2908 / $0.8300 | Buy Now |
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DISTI #
BSC0504NSIATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 21A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC0504NSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2352 / $0.2691 | Buy Now |
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DISTI #
726-BSC0504NSIATMA1
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Mouser Electronics | MOSFETs TRENCH <= 40V RoHS: Compliant | 32015 |
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$0.2900 / $0.7000 | Buy Now |
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DISTI #
E02:0323_09125827
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Arrow Electronics | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks | Europe - 5000 |
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$0.3050 / $0.3080 | Buy Now |
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DISTI #
V36:1790_13991205
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Arrow Electronics | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2425 | Americas - 5000 |
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$0.2819 / $0.2847 | Buy Now |
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DISTI #
V72:2272_13991205
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Arrow Electronics | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2222 Container: Cut Strips | Americas - 67 |
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$0.2875 / $0.4299 | Buy Now |
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Future Electronics | Single N-Channel 30 V 3.7 mOhm 11.1 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel |
0 Reel |
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$0.2550 / $0.2600 | Buy Now |
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DISTI #
22322625
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Verical | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 | Americas - 5000 |
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$0.3074 / $0.3104 | Buy Now |
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DISTI #
82746412
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Verical | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2425 | Americas - 5000 |
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$0.2819 / $0.2847 | Buy Now |
Part Details for BSC0504NSIATMA1
BSC0504NSIATMA1 CAD Models
BSC0504NSIATMA1 Part Data Attributes
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BSC0504NSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0504NSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 288 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC0504NSIATMA1
This table gives cross-reference parts and alternative options found for BSC0504NSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0504NSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ033N03LSCGATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC0504NSIATMA1 vs BSZ033N03LSCGATMA1 |
| BSZ033N03MSCG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC0504NSIATMA1 vs BSZ033N03MSCG |
| BSZ033N03MSCGATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC0504NSIATMA1 vs BSZ033N03MSCGATMA1 |
| DMTH3004LK3Q-13 | Diodes Incorporated | Check for Price | Power Field-Effect Transistor, 21A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | BSC0504NSIATMA1 vs DMTH3004LK3Q-13 |