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Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73928890
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RS | Transistor, MOSFET, N-channel, 80V, 18A, 4.7 mOhm, 3-power, TDSON8 EP | Infineon BSC047N08NS3G RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 10 |
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$1.1900 / $1.5000 | Buy Now |
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Bristol Electronics | 66 |
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RFQ | ||
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LCSC | 80V 100A 4.7m10V50A 2.5W 3.5V90uA 1PCSNChannel TDSON-8(5.2x5.9) MOSFETs ROHS | 3971 |
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$0.7980 / $1.4697 | Buy Now |
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Sense Electronic Company Limited | TDSON-8 | 5000 |
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RFQ |
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BSC047N08NS3G
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC047N08NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 310 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC047N08NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC047N08NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NVMFS6H824NWFT1G | Power MOSFET 80V, 107A, 4.5 mΩ, Single N-Channel, 1500-REEL, Automotive Qualified | onsemi | BSC047N08NS3G vs NVMFS6H824NWFT1G |
CSD19502Q5BT | 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC047N08NS3G vs CSD19502Q5BT |
NVMFS6H824NT1G | Power MOSFET 80V, 107A, 4.5 mΩ, Single N-Channel, 1500-REEL, Automotive Qualified | onsemi | BSC047N08NS3G vs NVMFS6H824NT1G |
CSD19502Q5B | 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC047N08NS3G vs CSD19502Q5B |