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Transistors / Power Field-Effect Transistors / BSC035N10NS5
Datasheets
BSC035N10NS5 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TDSON-8

Part Details for BSC035N10NS5 by Infineon Technologies AG

Results Overview of BSC035N10NS5 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

BSC035N10NS5 Information

BSC035N10NS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC035N10NS5

Part # Distributor Description Stock Price Buy
DISTI # 67611304
Verical Trans MOSFET N-CH 100V 100A 8-Pin TDSON EP T/R Min Qty: 24 Package Multiple: 1 Date Code: 2301 Americas - 4847
  • 24 $3.3858
  • 25 $3.2404
  • 50 $3.1169
  • 100 $3.0111
  • 250 $2.9198
  • 500 $2.8404
  • 1,000 $2.7709
  • 2,500 $2.7098
$2.7098 / $3.3858 Buy Now
Bristol Electronics   Min Qty: 3 522
  • 3 $2.4640
  • 12 $1.6016
  • 33 $1.2320
  • 103 $1.1499
  • 219 $1.0677
  • 446 $1.0102
$1.0102 / $2.4640 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXID... E SEMICONDUCTOR FET more 3877
  • 1 $6.0330
  • 270 $3.3182
  • 604 $3.0165
$3.0165 / $6.0330 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXID... E SEMICONDUCTOR FET more 417
  • 1 $3.3000
  • 122 $1.5400
  • 326 $1.4300
$1.4300 / $3.3000 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 4847
  • 1 $5.2790
  • 5 $3.1360
  • 10 $2.5440
  • 30 $2.1500
  • 50 $2.0710
  • 100 $2.0110
$2.0110 / $5.2790 Buy Now
Win Source Electronics Superior thermal resistance 22000
  • 40 $1.3993
  • 80 $1.3091
  • 120 $1.2639
  • 175 $1.1737
  • 225 $1.1285
  • 280 $1.0834
$1.0834 / $1.3993 Buy Now

Part Details for BSC035N10NS5

BSC035N10NS5 CAD Models

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BSC035N10NS5 Part Data Attributes

Parametric Data
BSC035N10NS5 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC035N10NS5 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TDSON-8
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC035N10NS5

This table gives cross-reference parts and alternative options found for BSC035N10NS5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC035N10NS5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NDBA180N10BT4H onsemi Check for Price Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel, 800-REEL BSC035N10NS5 vs NDBA180N10BT4H

BSC035N10NS5 Related Parts

BSC035N10NS5 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the BSC035N10NS5 is 175°C, as specified in the datasheet.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.

  • The maximum current rating of the BSC035N10NS5 is 35A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.

  • To protect the BSC035N10NS5 from overvoltage and overcurrent, consider using a voltage regulator or a surge protector, and implement overcurrent protection using a fuse or a current-sensing resistor.

  • The recommended gate drive voltage for the BSC035N10NS5 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.