Datasheets
BSC032N03S by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8

Part Details for BSC032N03S by Infineon Technologies AG

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Part Details for BSC032N03S

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BSC032N03S Part Data Attributes

BSC032N03S Infineon Technologies AG
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BSC032N03S Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 550 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 78 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC032N03S

This table gives cross-reference parts and alternative options found for BSC032N03S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC032N03S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC032N03SGAUMA1 Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC032N03S vs BSC032N03SGAUMA1
Part Number Description Manufacturer Compare
BSC032N03SG Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC032N03S vs BSC032N03SG
CSD17505Q5A 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm 8-VSONP -55 to 150 Texas Instruments BSC032N03S vs CSD17505Q5A
CSD17581Q5A 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150 Texas Instruments BSC032N03S vs CSD17581Q5A
CSD17581Q5AT 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150 Texas Instruments BSC032N03S vs CSD17581Q5AT
SISA12ADN-T1-GE3 Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies BSC032N03S vs SISA12ADN-T1-GE3
BSC032N03SGAUMA1 Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC032N03S vs BSC032N03SGAUMA1
RS1E240BNTB Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 ROHM Semiconductor BSC032N03S vs RS1E240BNTB

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