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Transistors / Power Field-Effect Transistors / BSC031N06NS3GATMA1
Datasheets
BSC031N06NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC031N06NS3GATMA1 by Infineon Technologies AG

Results Overview of BSC031N06NS3GATMA1 by Infineon Technologies AG

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BSC031N06NS3GATMA1 Information

BSC031N06NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC031N06NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 38AH7648
Newark Trench 40 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 5000
  • 1 $0.7290
$0.7290 Buy Now
DISTI # 86AK4437
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC031N06NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.9470
$0.9470 Buy Now
DISTI # 85X4151
Newark Mosfet, N-Ch, 60V, 100A, 139W, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Conti... nuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC031N06NS3GATMA1 more RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $2.6200
  • 10 $1.8500
  • 25 $1.6800
  • 50 $1.5200
  • 100 $1.3500
  • 250 $1.2300
  • 500 $1.1000
$1.1000 / $2.6200 Buy Now
DISTI # BSC031N06NS3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 100A TDSON-8-1 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6954
In Stock
  • 1 $2.9000
  • 10 $1.8800
  • 100 $1.2987
  • 500 $1.0504
  • 1,000 $0.9706
  • 2,000 $0.9114
  • 5,000 $0.9114
$0.9114 / $2.9000 Buy Now
DISTI # BSC031N06NS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.7285
$0.7285 Buy Now
Future Electronics Single N-Channel 60 V 3.1 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks Container: Reel 5000
Reel
  • 5,000 $0.7500
$0.7500 Buy Now
Future Electronics Single N-Channel 60 V 3.1 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks Container: Reel 5000
Reel
  • 5,000 $0.7500
$0.7500 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 60V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE ... SEMICONDUCTOR FET more 123
  • 1 $1.5938
  • 18 $1.2750
  • 60 $0.9563
$0.9563 / $1.5938 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 60V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE ... SEMICONDUCTOR FET more 18
  • 1 $2.5200
  • 3 $1.8900
  • 14 $1.5750
$1.5750 / $2.5200 Buy Now
Rochester Electronics Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 7245
  • 1 $1.0100
  • 25 $0.9898
  • 100 $0.9494
  • 500 $0.9090
  • 1,000 $0.8585
$0.8585 / $1.0100 Buy Now
DISTI # BSC031N06NS3GATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 24058
  • 1 $0.9530
  • 10 $0.8460
  • 50 $0.8440
  • 100 $0.8100
  • 500 $0.8090
  • 1,000 $0.8080
$0.8080 / $0.9530 Buy Now
DISTI # SP000451482
EBV Elektronik Trans MOSFET NCH 60V 100A 8Pin TDSON TR (Alt: SP000451482) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days EBV - 5000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 5000
  • 5,000 $1.2300
$1.2300 Buy Now
Vyrian Transistors 22306
RFQ
Win Source Electronics MOSFET N-CH 60V 100A TDSON-8 85645
  • 35 $1.4612
  • 85 $1.1990
  • 130 $1.1615
  • 180 $1.1240
  • 235 $1.0866
  • 310 $0.9742
$0.9742 / $1.4612 Buy Now

Part Details for BSC031N06NS3GATMA1

BSC031N06NS3GATMA1 CAD Models

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BSC031N06NS3GATMA1 Part Data Attributes

Parametric Data
BSC031N06NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC031N06NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 298 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.0031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC031N06NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC031N06NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC031N06NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDMS86540_F142 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN BSC031N06NS3GATMA1 vs FDMS86540_F142
BSC034N06NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 21A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC031N06NS3GATMA1 vs BSC034N06NS
SI7164DP-T1-GE3 Vishay Intertechnologies $1.6498 Power Field-Effect Transistor, 23.5A I(D), 60V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 BSC031N06NS3GATMA1 vs SI7164DP-T1-GE3
BSC031N06NS3GXT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC031N06NS3GATMA1 vs BSC031N06NS3GXT
BSC031N06NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC031N06NS3GATMA1 vs BSC031N06NS3G

BSC031N06NS3GATMA1 Related Parts

BSC031N06NS3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC031N06NS3GATMA1 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.

  • Yes, the BSC031N06NS3GATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.

  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.