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Transistors / Power Field-Effect Transistors / BSC031N06NS3GATMA1
Datasheets
BSC031N06NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC031N06NS3GATMA1 by Infineon Technologies AG

Overview of BSC031N06NS3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

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Price & Stock for BSC031N06NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 86AK4437
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC031N06NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.9980
$0.9980 Buy Now
DISTI # 85X4151
Newark Mosfet, N-Ch, 60V, 100A, 139W, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC031N06NS3GATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $2.6000
  • 10 $1.9200
  • 25 $1.7500
  • 50 $1.5800
  • 100 $1.4000
  • 250 $1.2800
  • 500 $1.1400
$1.1400 / $2.6000 Buy Now
DISTI # BSC031N06NS3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 100A TDSON-8-1 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 8605
In Stock
  • 1 $2.9400
  • 10 $1.9090
  • 100 $1.3201
  • 500 $1.0684
  • 1,000 $0.9875
  • 2,000 $0.9300
  • 5,000 $0.9300
$0.9300 / $2.9400 Buy Now
DISTI # BSC031N06NS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.7750
$0.7750 Buy Now
DISTI # V72:2272_06383262
Arrow Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2405 Container: Cut Strips Americas - 5000
  • 1 $1.9567
  • 10 $1.4887
  • 25 $1.4786
  • 100 $1.1290
  • 250 $1.1202
  • 500 $0.9439
  • 1,000 $0.8803
  • 3,000 $0.8250
$0.8250 / $1.9567 Buy Now
DISTI # E32:1076_00171073
Arrow Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2325 Europe - 2702
  • 1 $2.8858
  • 10 $1.8881
  • 100 $1.3057
  • 500 $1.0506
  • 1,000 $1.0020
  • 2,000 $0.9445
  • 5,000 $0.8763
$0.8763 / $2.8858 Buy Now
Future Electronics Single N-Channel 60 V 3.1 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 10000
Reel
  • 5,000 $0.8100
$0.8100 Buy Now
Future Electronics Single N-Channel 60 V 3.1 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks Container: Reel 0
Reel
  • 5,000 $0.8100
$0.8100 Buy Now
DISTI # 69268159
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 30 Package Multiple: 1 Date Code: 2235 Americas - 24365
  • 30 $1.0700
  • 50 $1.0613
  • 200 $1.0525
$1.0525 / $1.0700 Buy Now
DISTI # 79364433
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 8 Package Multiple: 1 Date Code: 2405 Americas - 5000
  • 8 $1.9567
  • 10 $1.4887
  • 25 $1.4786
  • 100 $1.1290
  • 250 $1.1202
  • 500 $0.9439
  • 1,000 $0.8803
  • 3,000 $0.8250
$0.8250 / $1.9567 Buy Now
DISTI # 76496638
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 8 Package Multiple: 1 Date Code: 2325 Americas - 2696
  • 8 $2.8921
  • 10 $1.8922
  • 100 $1.3086
  • 500 $1.0529
  • 1,000 $1.0041
  • 2,000 $0.9466
  • 5,000 $0.8782
$0.8782 / $2.8921 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 60V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 123
  • 1 $1.5938
  • 18 $1.2750
  • 60 $0.9563
$0.9563 / $1.5938 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 60V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 18
  • 1 $2.5200
  • 3 $1.8900
  • 14 $1.5750
$1.5750 / $2.5200 Buy Now
Rochester Electronics BSC031N06 - Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 5043
RFQ
DISTI # C1S322000192300
Chip1Stop Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 24365
  • 1 $1.0800
  • 10 $0.8560
  • 50 $0.8490
  • 200 $0.8420
$0.8420 / $1.0800 Buy Now
DISTI # SP000451482
EBV Elektronik Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP000451482) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 60V 100A TDSON-8 85645
  • 35 $1.4612
  • 85 $1.1990
  • 130 $1.1615
  • 180 $1.1240
  • 235 $1.0866
  • 310 $0.9742
$0.9742 / $1.4612 Buy Now

Part Details for BSC031N06NS3GATMA1

BSC031N06NS3GATMA1 CAD Models

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BSC031N06NS3GATMA1 Part Data Attributes

Parametric Data
BSC031N06NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC031N06NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 298 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.0031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC031N06NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC031N06NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC031N06NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC031N06NS3G Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC031N06NS3GATMA1 vs BSC031N06NS3G
FDMS86540_F142 Power Field-Effect Transistor, 20A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation BSC031N06NS3GATMA1 vs FDMS86540_F142
BSC034N06NSATMA1 Power Field-Effect Transistor, 21A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC031N06NS3GATMA1 vs BSC034N06NSATMA1

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