Datasheets
BSC030N03LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC030N03LSGATMA1 by Infineon Technologies AG

Overview of BSC030N03LSGATMA1 by Infineon Technologies AG

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Price & Stock for BSC030N03LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 60R2485
Newark Mosfet, N Channel, 30V, 100A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSC030N03LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 8466
  • 1 $1.1900
  • 10 $0.9680
  • 100 $0.7540
  • 500 $0.6390
  • 1,000 $0.5210
  • 2,500 $0.5080
$0.5080 / $1.1900 Buy Now
DISTI # BSC030N03LSGATMA1CT-ND
DigiKey MOSFET N-CH 30V 23A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 17763
In Stock
  • 1 $1.1400
  • 10 $0.9310
  • 100 $0.7243
  • 500 $0.6139
  • 1,000 $0.5001
  • 2,000 $0.4708
  • 5,000 $0.4484
  • 10,000 $0.4277
$0.4277 / $1.1400 Buy Now
DISTI # BSC030N03LSGATMA1
Avnet Americas Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # BSC030N03LSGATMA1
Avnet Americas Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4554
  • 10,000 $0.4411
  • 20,000 $0.4269
  • 30,000 $0.4127
  • 40,000 $0.3984
$0.3984 / $0.4554 Buy Now
DISTI # BSC030N03LSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4554
  • 10,000 $0.4411
  • 20,000 $0.4269
  • 30,000 $0.4127
  • 40,000 $0.3984
$0.3984 / $0.4554 Buy Now
DISTI # 726-BSC030N03LSGATMA
Mouser Electronics MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant 4369
  • 1 $0.8200
  • 10 $0.7010
  • 100 $0.5810
  • 500 $0.5190
  • 1,000 $0.4300
  • 2,500 $0.4270
$0.4270 / $0.8200 Buy Now
Future Electronics N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 10000
Reel
  • 5,000 $0.2400
$0.2400 Buy Now
Future Electronics N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.3900
  • 10,000 $0.3750
$0.3750 / $0.3900 Buy Now
Rochester Electronics BSC030N03LS - 30V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 38
  • 1 $0.4980
  • 25 $0.4880
  • 100 $0.4681
  • 500 $0.4482
  • 1,000 $0.4233
$0.4233 / $0.4980 Buy Now
Ameya Holding Limited   Min Qty: 50 4675
  • 50 $0.9957
  • 500 $0.9458
  • 1,000 $0.8798
  • 2,500 $0.8005
$0.8005 / $0.9957 Buy Now
LCSC 30V 3m30A10V 2.2V250uA 1PCSNChannel TDSON-8 MOSFETs ROHS 9575
  • 1 $0.4514
  • 10 $0.3682
  • 30 $0.3258
  • 100 $0.2849
  • 500 $0.2601
  • 1,000 $0.2469
$0.2469 / $0.4514 Buy Now

Part Details for BSC030N03LSGATMA1

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BSC030N03LSGATMA1 Part Data Attributes:

BSC030N03LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC030N03LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC030N03LSGATMA1

This table gives cross-reference parts and alternative options found for BSC030N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC030N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIR460DP-T1-GE3 Power Field-Effect Transistor, 24.3A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 Vishay Intertechnologies BSC030N03LSGATMA1 vs SIR460DP-T1-GE3
SI7634DP-T1-E3 Power Field-Effect Transistor, 23A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 Vishay Siliconix BSC030N03LSGATMA1 vs SI7634DP-T1-E3
NVTFS4C05NTAG Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel, WDFN8 3.3x3.3, 0.65P, 1500-REEL, Automotive Qualified onsemi BSC030N03LSGATMA1 vs NVTFS4C05NTAG
SSP7436N Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8 Secos Corporation BSC030N03LSGATMA1 vs SSP7436N
BSC030N03LSGE8176 Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC030N03LSGATMA1 vs BSC030N03LSGE8176

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