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Transistors / Power Field-Effect Transistors / BSC028N06NSTATMA1
Datasheets
BSC028N06NSTATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Part Details for BSC028N06NSTATMA1 by Infineon Technologies AG

Overview of BSC028N06NSTATMA1 by Infineon Technologies AG

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Price & Stock for BSC028N06NSTATMA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC6985
Newark Mosfet, N-Ch, 60V, 100A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC028N06NSTATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 8651
  • 1 $2.8900
  • 10 $2.4300
  • 25 $2.2700
  • 50 $2.1300
  • 100 $1.9700
  • 250 $1.8400
  • 500 $1.7000
$1.7000 / $2.8900 Buy Now
DISTI # 86AK4434
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC028N06NSTATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.3600
$1.3600 Buy Now
DISTI # BSC028N06NSTATMA1CT-ND
DigiKey MOSFET N-CH 60V 24A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 20481
In Stock
  • 1 $2.5900
  • 10 $2.1500
  • 100 $1.7115
  • 500 $1.4482
  • 1,000 $1.2288
  • 2,000 $1.1673
  • 5,000 $1.1234
$1.1234 / $2.5900 Buy Now
DISTI # BSC028N06NSTATMA1
Avnet Americas Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSTATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.3470
$1.3470 Buy Now
DISTI # 93AC6985
Avnet Americas Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 93AC6985) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 8651 Partner Stock
  • 1 $2.8900
  • 10 $2.4300
  • 25 $2.2900
  • 50 $2.1300
  • 100 $1.9800
$1.9800 / $2.8900 Buy Now
DISTI # 726-BSC028N06NSTATM1
Mouser Electronics MOSFET TRENCH 40<-<100V RoHS: Compliant 23645
  • 1 $2.5900
  • 10 $2.1300
  • 100 $1.7200
  • 500 $1.4500
  • 1,000 $1.1700
  • 5,000 $1.1200
$1.1200 / $2.5900 Buy Now
DISTI # E02:0323_12172808
Arrow Electronics Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2325 Europe - 5000
  • 5,000 $1.0833
$1.0833 Buy Now
DISTI # V72:2272_19084606
Arrow Electronics Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2334 Container: Cut Strips Americas - 1707
  • 1 $2.5458
  • 10 $2.0850
  • 25 $2.0626
  • 100 $1.6563
  • 250 $1.6392
  • 500 $1.3715
  • 1,000 $1.1144
$1.1144 / $2.5458 Buy Now
Future Electronics 60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 5000
Reel
  • 5,000 $1.0700
$1.0700 Buy Now
Future Electronics 60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $1.0700
$1.0700 Buy Now
Future Electronics 60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $1.0700
$1.0700 Buy Now
DISTI # 80939925
Verical Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2416 Americas - 15000
  • 5,000 $1.3992
$1.3992 Buy Now
DISTI # 69194207
Verical Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2325 Americas - 5000
  • 5,000 $1.0812
$1.0812 Buy Now
DISTI # 69889001
Verical Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R Min Qty: 6 Package Multiple: 1 Date Code: 2334 Americas - 1707
  • 6 $2.5458
  • 10 $2.0850
  • 25 $2.0626
  • 100 $1.6563
  • 250 $1.6392
  • 500 $1.3715
  • 1,000 $1.1144
$1.1144 / $2.5458 Buy Now
Rochester Electronics BSC028N06 - N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 25
  • 1 $1.2700
  • 25 $1.2400
  • 100 $1.1900
  • 500 $1.1400
  • 1,000 $1.0800
$1.0800 / $1.2700 Buy Now
Ameya Holding Limited   Min Qty: 5000 3985
  • 5,000 $1.5193
  • 25,000 $1.4738
$1.4738 / $1.5193 Buy Now
NexGen Digital   3545
RFQ
DISTI # SP001666498
EBV Elektronik Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP001666498) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 25000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $1.5300
  • 10,000 $1.4300
$1.4300 / $1.5300 Buy Now

Part Details for BSC028N06NSTATMA1

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BSC028N06NSTATMA1 Part Data Attributes

Parametric Data
BSC028N06NSTATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06NSTATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06NSTATMA1

This table gives cross-reference parts and alternative options found for BSC028N06NSTATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NSTATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB026N06N Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06NSTATMA1 vs IPB026N06N
DMT6004LPS-13 Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSC028N06NSTATMA1 vs DMT6004LPS-13
IPB026N06NATMA1 Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06NSTATMA1 vs IPB026N06NATMA1
BSC028N06LS3GATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC028N06NSTATMA1 vs BSC028N06LS3GATMA1

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