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Transistors / Power Field-Effect Transistors / BSC028N06NSATMA1
Datasheets
BSC028N06NSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Part Details for BSC028N06NSATMA1 by Infineon Technologies AG

Overview of BSC028N06NSATMA1 by Infineon Technologies AG

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Price & Stock for BSC028N06NSATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1329
Newark Mosfet, N-Ch, 60V, 100A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC028N06NSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 6445
  • 1 $1.6900
  • 10 $1.5500
  • 25 $1.5500
  • 50 $1.5500
  • 100 $1.5500
  • 250 $1.4300
  • 500 $1.4300
  • 1,000 $1.3100
$1.3100 / $1.6900 Buy Now
DISTI # 98AK5416
Newark Mosfet, N-Channel, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC028N06NSATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.2500
$1.2500 Buy Now
DISTI # BSC028N06NSATMA1CT-ND
DigiKey MOSFET N-CH 60V 23A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 25079
In Stock
  • 1 $2.6600
  • 10 $2.2050
  • 100 $1.7550
  • 500 $1.4850
  • 1,000 $1.2600
  • 2,000 $1.1970
  • 5,000 $1.1520
$1.1520 / $2.6600 Buy Now
DISTI # BSC028N06NSATMA1
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1882
  • 10,000 $1.1510
  • 20,000 $1.1139
  • 30,000 $1.0768
  • 40,000 $1.0396
$1.0396 / $1.1882 Buy Now
DISTI # BSC028N06NSATMA1
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 5,000 $1.1882
  • 10,000 $1.1510
  • 20,000 $1.1139
  • 30,000 $1.0768
  • 40,000 $1.0396
$1.0396 / $1.1882 Buy Now
DISTI # BSC028N06NSATMA1
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1882
  • 10,000 $1.1510
  • 20,000 $1.1139
  • 30,000 $1.0768
  • 40,000 $1.0396
$1.0396 / $1.1882 Buy Now
DISTI # 79X1329
Avnet Americas Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1329) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 6445 Partner Stock
  • 1 $2.7700
  • 10 $2.3800
  • 25 $2.2300
  • 50 $2.0700
  • 100 $1.9100
$1.9100 / $2.7700 Buy Now
DISTI # 726-BSC028N06NSATMA1
Mouser Electronics MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant 5781
  • 1 $2.6600
  • 10 $2.1800
  • 100 $1.7600
  • 500 $1.4900
  • 1,000 $1.2000
  • 5,000 $1.1500
$1.1500 / $2.6600 Buy Now
DISTI # E02:0323_04268157
Arrow Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2403 Europe - 5000
  • 5,000 $1.2487
$1.2487 Buy Now
DISTI # V72:2272_06383464
Arrow Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2323 Container: Cut Strips Americas - 402
  • 1 $1.5778
  • 10 $1.4391
  • 25 $1.4320
  • 100 $1.2995
  • 250 $1.2740
  • 500 $1.0211
$1.0211 / $1.5778 Buy Now
Future Electronics Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Container: Reel 25000
Reel
  • 5,000 $0.8650
$0.8650 Buy Now
Future Electronics Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $1.0100
$1.0100 Buy Now
Future Electronics Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Container: Reel 0
Reel
  • 5,000 $0.8650
$0.8650 Buy Now
DISTI # 69268136
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 20 Package Multiple: 1 Date Code: 2311 Americas - 9790
  • 20 $1.6375
  • 50 $1.5250
  • 100 $1.2875
  • 200 $1.2175
  • 500 $1.2137
  • 1,000 $1.0975
  • 2,000 $1.0338
  • 5,000 $1.0075
$1.0075 / $1.6375 Buy Now
DISTI # 79933923
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2403 Americas - 5000
  • 5,000 $1.2451
$1.2451 Buy Now
DISTI # 68788376
Verical Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R Min Qty: 7 Package Multiple: 1 Date Code: 2323 Americas - 402
  • 7 $1.5778
  • 10 $1.4391
  • 25 $1.4320
  • 100 $1.2995
  • 250 $1.2740
  • 500 $1.0211
$1.0211 / $1.5778 Buy Now
Bristol Electronics   5000
RFQ
Quest Components 23 A, 60 V, 0.0028 OHM, N-CHANNEL, SI, POWER, MOSFET 4000
  • 1 $2.6000
  • 500 $1.0725
  • 933 $0.9750
$0.9750 / $2.6000 Buy Now
DISTI # BSC028N06NSATMA1
TME Transistor: N-MOSFET, unipolar, 60V, 100A, 83W, PG-TDSON-8 Min Qty: 1 4359
  • 1 $1.8900
  • 3 $1.6800
  • 10 $1.5000
  • 100 $1.4000
  • 250 $1.3500
  • 1,000 $1.3100
$1.3100 / $1.8900 Buy Now
Ameya Holding Limited   Min Qty: 1250 820
  • 1,250 $1.8448
  • 2,500 $1.7895
$1.7895 / $1.8448 Buy Now
Ameya Holding Limited Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 2875
RFQ
Chip1Cloud MOSFET N-CH 60V 23A TDSON-8 12100
RFQ
DISTI # C1S322000437267
Chip1Stop Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 9790
  • 1 $1.9700
  • 10 $1.3100
  • 50 $1.2200
  • 100 $1.0300
  • 200 $0.9740
  • 500 $0.9710
  • 1,000 $0.8780
  • 2,000 $0.8270
  • 5,000 $0.8060
$0.8060 / $1.9700 Buy Now
DISTI # SP000917416
EBV Elektronik Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP000917416) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 130000
Buy Now
New Advantage Corporation Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 20000
  • 5,000 $0.9500
  • 20,000 $0.8867
$0.8867 / $0.9500 Buy Now
Win Source Electronics MOSFET N-CH 60V 23A TDSON-8 595600
  • 55 $0.9330
  • 135 $0.7660
  • 205 $0.7420
  • 280 $0.7180
  • 365 $0.6940
  • 485 $0.6220
$0.6220 / $0.9330 Buy Now

Part Details for BSC028N06NSATMA1

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BSC028N06NSATMA1 Part Data Attributes

Parametric Data
BSC028N06NSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06NSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06NSATMA1

This table gives cross-reference parts and alternative options found for BSC028N06NSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB026N06N Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06NSATMA1 vs IPB026N06N
DMT6004LPS-13 Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSC028N06NSATMA1 vs DMT6004LPS-13
IPB026N06NATMA1 Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06NSATMA1 vs IPB026N06NATMA1
BSC028N06NSTATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC028N06NSATMA1 vs BSC028N06NSTATMA1
BSC028N06LS3GATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC028N06NSATMA1 vs BSC028N06LS3GATMA1

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