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Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSC028N06NS
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Mouser Electronics | MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 6163 |
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$0.9950 / $2.4300 | Buy Now |
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Bristol Electronics | Min Qty: 3 | 178 |
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$0.9000 / $2.4000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 142 |
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$1.1200 / $3.2000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 19 |
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$1.6200 / $2.0250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 8 |
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$2.8350 / $3.7800 | Buy Now |
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Ameya Holding Limited | 60V,100A,N Channel Power MOSFET | 12317 |
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RFQ | |
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CHIPMALL.COM LIMITED | 60V 23A 2.8m@10V,50A 2.5W 2.8V@50uA 1PCSNChannel TDSON-8-EP5x6 MOSFETs ROHS | 5713 |
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$0.4523 / $0.8172 | Buy Now |
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LCSC | 60V 23A 2.8m10V50A 2.5W 2.8V50uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS | 5351 |
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$0.4712 / $0.8512 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R / New OptiMOS™ 40V and 60V | 65000 |
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$0.4340 / $0.6500 | Buy Now |
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BSC028N06NS
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC028N06NS
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC028N06NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC027N06LS5ATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC028N06NS vs BSC027N06LS5ATMA1 |
BSC028N06LS3GATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC028N06NS vs BSC028N06LS3GATMA1 |
BSC028N06NSTATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC028N06NS vs BSC028N06NSTATMA1 |
IPB026N06NATMA1 | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | BSC028N06NS vs IPB026N06NATMA1 |