Datasheets
BSC028N06NS by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Part Details for BSC028N06NS by Infineon Technologies AG

Overview of BSC028N06NS by Infineon Technologies AG

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Price & Stock for BSC028N06NS

Part # Distributor Description Stock Price Buy
DISTI # 726-BSC028N06NS
Mouser Electronics MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant 7818
  • 1 $2.6500
  • 10 $2.2000
  • 100 $1.7500
  • 250 $1.6100
  • 500 $1.4700
  • 1,000 $1.2800
  • 5,000 $1.0800
$1.0800 / $2.6500 Buy Now
Bristol Electronics   Min Qty: 3 178
  • 3 $2.4000
  • 10 $1.8000
  • 29 $1.5000
  • 101 $0.9000
$0.9000 / $2.4000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 19
  • 1 $2.0250
  • 3 $1.8630
  • 14 $1.6200
$1.6200 / $2.0250 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 142
  • 1 $3.2000
  • 39 $1.2000
  • 126 $1.1200
$1.1200 / $3.2000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 8
  • 1 $3.7800
  • 2 $2.8350
$2.8350 / $3.7800 Buy Now
DISTI # TMOSP10858
Rutronik N-CH 60V 100A 2.8mOhm SON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel Stock DE - 30000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 5,000 $1.4400
  • 10,000 $1.3600
  • 15,000 $1.1500
  • 20,000 $1.1000
$1.1000 / $1.4400 Buy Now
Sense Electronic Company Limited TDSON8 500000
RFQ
Win Source Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R / New OptiMOS™ 40V and 60V 595626
  • 55 $0.9330
  • 135 $0.7660
  • 205 $0.7420
  • 280 $0.7180
  • 365 $0.6940
  • 485 $0.6220
$0.6220 / $0.9330 Buy Now

Part Details for BSC028N06NS

BSC028N06NS CAD Models

BSC028N06NS Part Data Attributes:

BSC028N06NS Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06NS Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06NS

This table gives cross-reference parts and alternative options found for BSC028N06NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMT6004LPS-13 Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSC028N06NS vs DMT6004LPS-13
BSC028N06NSATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC028N06NS vs BSC028N06NSATMA1
SP000453652 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 Infineon Technologies AG BSC028N06NS vs SP000453652
BSC028N06NSTATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC028N06NS vs BSC028N06NSTATMA1
BSB028N06NN3G Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN Infineon Technologies AG BSC028N06NS vs BSB028N06NN3G

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