Datasheets
BSC028N06LS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC028N06LS3GATMA1 by Infineon Technologies AG

Overview of BSC028N06LS3GATMA1 by Infineon Technologies AG

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Price & Stock for BSC028N06LS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1328
Newark Mosfet, N-Ch, 60V, 100A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSC028N06LS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 28982
  • 1 $1.5600
  • 10 $1.5600
  • 25 $1.5600
  • 50 $1.5600
  • 100 $1.4300
  • 250 $1.4300
  • 500 $1.4300
  • 1,000 $1.3200
$1.3200 / $1.5600 Buy Now
DISTI # 86AK4433
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC028N06LS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.4100
$1.4100 Buy Now
DISTI # BSC028N06LS3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 23A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 10920
In Stock
  • 1 $2.9100
  • 10 $2.4390
  • 100 $1.9733
  • 500 $1.7540
  • 1,000 $1.5019
  • 2,000 $1.4142
  • 5,000 $1.3567
$1.3567 / $2.9100 Buy Now
DISTI # BSC028N06LS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 23A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 25000
  • 5,000 $1.4472
  • 10,000 $1.4020
  • 20,000 $1.3567
  • 30,000 $1.3115
  • 40,000 $1.2663
$1.2663 / $1.4472 Buy Now
DISTI # BSC028N06LS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 23A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.4472
  • 10,000 $1.4020
  • 20,000 $1.3567
  • 30,000 $1.3115
  • 40,000 $1.2663
$1.2663 / $1.4472 Buy Now
DISTI # 79X1328
Avnet Americas Trans MOSFET N-CH 60V 23A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1328) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 2871 Partner Stock
  • 1 $3.0300
  • 10 $2.5400
  • 25 $2.3700
  • 50 $2.2200
  • 100 $2.0500
$2.0500 / $3.0300 Buy Now
DISTI # 726-BSC028N06LS3GATM
Mouser Electronics MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant 17959
  • 1 $2.9100
  • 10 $2.4400
  • 25 $2.3300
  • 100 $1.9800
  • 250 $1.9400
  • 500 $1.6600
  • 1,000 $1.4200
  • 5,000 $1.3200
$1.3200 / $2.9100 Buy Now
DISTI # V72:2272_06383281
Arrow Electronics Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2243 Container: Cut Strips Americas - 723
  • 1 $2.8543
  • 10 $2.3811
  • 25 $2.2538
  • 100 $1.8995
  • 250 $1.8460
  • 500 $1.1845
$1.1845 / $2.8543 Buy Now
Future Electronics Single N-Channel 60 V 2.8 mOhm 132 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 5000
Reel
  • 5,000 $1.1700
$1.1700 Buy Now
Future Electronics Single N-Channel 60 V 2.8 mOhm 132 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 5,000 $1.1700
$1.1700 Buy Now
DISTI # 69265056
Verical Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R Min Qty: 14 Package Multiple: 1 Date Code: 2301 Americas - 14268
  • 14 $2.2375
  • 50 $1.8750
  • 100 $1.7750
  • 200 $1.7625
  • 500 $1.6000
  • 1,000 $1.5000
  • 2,000 $1.4750
  • 5,000 $1.4250
$1.4250 / $2.2375 Buy Now
DISTI # 77795343
Verical Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2404 Americas - 10000
  • 5,000 $1.4563
$1.4563 Buy Now
DISTI # 65153797
Verical Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R Min Qty: 6 Package Multiple: 1 Date Code: 2243 Americas - 723
  • 6 $2.8543
  • 10 $2.3811
  • 25 $2.2538
  • 100 $1.8995
  • 250 $1.8460
  • 500 $1.1845
$1.1845 / $2.8543 Buy Now
Bristol Electronics   76
RFQ
Bristol Electronics   3900
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 28
  • 1 $3.3600
  • 2 $2.5200
  • 11 $2.1000
$2.1000 / $3.3600 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.0028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 3120
  • 1 $3.9900
  • 326 $1.6459
  • 609 $1.4963
$1.4963 / $3.9900 Buy Now
Rochester Electronics BSC028N06LS3 G - TRENCH 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 8480
  • 1 $1.5800
  • 25 $1.5500
  • 100 $1.4900
  • 500 $1.4200
  • 1,000 $1.3500
$1.3500 / $1.5800 Buy Now
Ameya Holding Limited   Min Qty: 1250 152
  • 1,250 $3.2884
  • 2,500 $3.1897
$3.1897 / $3.2884 Buy Now
DISTI # C1S322000192258
Chip1Stop Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 14268
  • 1 $2.5300
  • 10 $1.7900
  • 50 $1.5000
  • 100 $1.4200
  • 200 $1.4100
  • 500 $1.2800
  • 1,000 $1.2000
  • 2,000 $1.1800
  • 5,000 $1.1400
$1.1400 / $2.5300 Buy Now
DISTI # SP000453652
EBV Elektronik Trans MOSFET N-CH 60V 23A 8-Pin TDSON T/R (Alt: SP000453652) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 60 V 2.8 mOhm 132 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 20000
  • 5,000 $1.4300
  • 20,000 $1.3300
$1.3300 / $1.4300 Buy Now
Win Source Electronics MOSFET N-CH 60V 100A TDSON-8 355348
  • 45 $1.1310
  • 110 $0.9280
  • 170 $0.8990
  • 230 $0.8700
  • 300 $0.8410
  • 400 $0.7540
$0.7540 / $1.1310 Buy Now

Part Details for BSC028N06LS3GATMA1

BSC028N06LS3GATMA1 CAD Models

BSC028N06LS3GATMA1 Part Data Attributes

BSC028N06LS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06LS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 298 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06LS3GATMA1

This table gives cross-reference parts and alternative options found for BSC028N06LS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06LS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB026N06N Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06LS3GATMA1 vs IPB026N06N
DMT6004LPS-13 Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSC028N06LS3GATMA1 vs DMT6004LPS-13
IPB026N06NATMA1 Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG BSC028N06LS3GATMA1 vs IPB026N06NATMA1
BSC028N06NSTATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC028N06LS3GATMA1 vs BSC028N06NSTATMA1

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