Part Details for BSC028N06LS3G by Infineon Technologies AG
Overview of BSC028N06LS3G by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC028N06LS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 2895 |
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$1.0102 / $2.4640 | Buy Now |
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Bristol Electronics | 47 |
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RFQ | ||
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Quest Components | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | 28 |
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$2.1000 / $3.3600 | Buy Now |
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Quest Components | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | 37 |
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$2.0250 / $3.0375 | Buy Now |
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Quest Components | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | 2316 |
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$1.1550 / $3.3000 | Buy Now |
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Quest Components | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | 4000 |
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$2.4750 / $4.9500 | Buy Now |
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NexGen Digital | 1 |
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Sense Electronic Company Limited | TDSON-8 | 10000 |
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Win Source Electronics | MOSFET N-CH 60V 100A TDSON-8 | 362600 |
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$0.7540 / $1.1310 | Buy Now |
Part Details for BSC028N06LS3G
BSC028N06LS3G CAD Models
BSC028N06LS3G Part Data Attributes:
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BSC028N06LS3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC028N06LS3G
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 298 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC028N06LS3G
This table gives cross-reference parts and alternative options found for BSC028N06LS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06LS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC100N06LS3GATMA1 | Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC028N06LS3G vs BSC100N06LS3GATMA1 |
| BSC100N06LS3G | Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC028N06LS3G vs BSC100N06LS3G |
| BSC046N02KSG | Power Field-Effect Transistor, 19A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC028N06LS3G vs BSC046N02KSG |