Datasheets
BSC026NE2LS5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for BSC026NE2LS5ATMA1 by Infineon Technologies AG

Overview of BSC026NE2LS5ATMA1 by Infineon Technologies AG

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Price & Stock for BSC026NE2LS5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1375
Newark Mosfet, N-Ch, 25V, 82A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:82A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon BSC026NE2LS5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 15000
  • 1 $1.4900
  • 10 $1.2200
  • 25 $1.1200
  • 50 $1.0400
  • 100 $0.9450
  • 250 $0.8740
  • 500 $0.8010
  • 1,000 $0.6520
$0.6520 / $1.4900 Buy Now
DISTI # BSC026NE2LS5ATMA1CT-ND
DigiKey MOSFET N-CH 25V 24A/82A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4896
In Stock
  • 1 $1.4300
  • 10 $1.1690
  • 100 $0.9091
  • 500 $0.7705
  • 1,000 $0.6277
  • 2,000 $0.5909
  • 5,000 $0.5627
  • 10,000 $0.5368
$0.5368 / $1.4300 Buy Now
DISTI # BSC026NE2LS5ATMA1
Avnet Americas Transistor MOSFET N-CH 25V 82A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026NE2LS5ATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.5715
  • 10,000 $0.5537
  • 20,000 $0.5358
  • 30,000 $0.5179
  • 40,000 $0.5001
$0.5001 / $0.5715 Buy Now
DISTI # 726-BSC026NE2LS5ATMA
Mouser Electronics MOSFET LV POWER MOS RoHS: Compliant 2733
  • 1 $1.4300
  • 10 $1.1700
  • 100 $0.9030
  • 500 $0.7670
  • 1,000 $0.5890
  • 2,500 $0.5840
  • 5,000 $0.5620
  • 10,000 $0.5360
$0.5360 / $1.4300 Buy Now
DISTI # E02:0323_08481969
Arrow Electronics Trans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2405 Europe - 5000
  • 5,000 $0.4984
  • 10,000 $0.4791
$0.4791 / $0.4984 Buy Now
DISTI # V72:2272_06384601
Arrow Electronics Trans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2405 Container: Cut Strips Americas - 4600
  • 1 $1.3950
  • 10 $1.1476
  • 25 $1.1259
  • 100 $0.8813
  • 250 $0.8505
  • 500 $0.7230
  • 1,000 $0.5704
  • 3,000 $0.5343
$0.5343 / $1.3950 Buy Now
Future Electronics BSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 5,000 $0.4700
$0.4700 Buy Now
Future Electronics BSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 5,000 $0.4700
$0.4700 Buy Now
DISTI # 78453313
Verical Trans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2405 Americas - 5000
  • 5,000 $0.4974
  • 10,000 $0.4781
$0.4781 / $0.4974 Buy Now
DISTI # 71240895
Verical Trans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R Min Qty: 30 Package Multiple: 1 Date Code: 2240 Americas - 4840
  • 30 $1.0713
  • 50 $0.9950
  • 100 $0.8388
  • 200 $0.7925
  • 500 $0.7900
  • 1,000 $0.7137
$0.7137 / $1.0713 Buy Now
DISTI # 78813612
Verical Trans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R Min Qty: 13 Package Multiple: 1 Date Code: 2405 Americas - 4600
  • 13 $1.1476
  • 25 $1.1259
  • 100 $0.8813
  • 250 $0.8505
  • 500 $0.7230
  • 1,000 $0.5704
  • 3,000 $0.5343
$0.5343 / $1.1476 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 25V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 80
  • 1 $1.2000
  • 16 $0.7200
  • 70 $0.5600
$0.5600 / $1.2000 Buy Now
Ameya Holding Limited   Min Qty: 5 2710
  • 5 $1.7793
  • 10 $1.7366
  • 100 $1.6950
  • 250 $1.6544
  • 500 $1.6146
$1.6146 / $1.7793 Buy Now
Ameya Holding Limited BSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8 1366
RFQ
Chip1Cloud MOSFET N-CH 25V 24A/82A TDSON 2910
RFQ
DISTI # C1S322001057527
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 4840
  • 5 $0.9070
  • 10 $0.8570
  • 50 $0.7960
  • 100 $0.6710
  • 200 $0.6340
  • 500 $0.6320
  • 1,000 $0.5710
$0.5710 / $0.9070 Buy Now
CHIPMALL.COM LIMITED With the OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. 2396
  • 1 $0.6225
$0.6225 Buy Now
DISTI # SP001212432
EBV Elektronik Transistor MOSFET N-CH 25V 82A 8-Pin TDSON T/R (Alt: SP001212432) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC026NE2LS5ATMA1

BSC026NE2LS5ATMA1 CAD Models

BSC026NE2LS5ATMA1 Part Data Attributes

BSC026NE2LS5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC026NE2LS5ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 14 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 328 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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