Datasheets
BSC022N04LS6ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 139A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8FL, 8 PIN

Part Details for BSC022N04LS6ATMA1 by Infineon Technologies AG

Overview of BSC022N04LS6ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for BSC022N04LS6ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 02AH1041
Newark Mosfet, N-Ch, 40V, 100A, 175Deg C, 79W, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0018Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.3V, Power Rohs Compliant: Yes |Infineon BSC022N04LS6ATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 401
  • 1 $1.6600
  • 10 $1.3700
  • 25 $1.2700
  • 50 $1.1800
  • 100 $1.0700
  • 250 $0.9860
  • 500 $0.9000
$0.9000 / $1.6600 Buy Now
DISTI # 86AK4428
Newark Mosfet, N-Ch, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC022N04LS6ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.6250
$0.6250 Buy Now
DISTI # BSC022N04LS6ATMA1CT-ND
DigiKey MOSFET N-CH 40V 27A/100A TDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 12267
In Stock
  • 1 $2.1400
  • 10 $1.3720
  • 100 $0.9315
  • 500 $0.7430
  • 1,000 $0.6825
  • 2,000 $0.6315
  • 5,000 $0.6016
$0.6016 / $2.1400 Buy Now
DISTI # BSC022N04LS6ATMA1
Avnet Americas Transistor MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC022N04LS6ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-BSC022N04LS6ATMA
Mouser Electronics MOSFETs TRENCH <= 40V RoHS: Compliant 28807
  • 1 $1.5900
  • 10 $1.3100
  • 100 $1.0200
  • 500 $0.8650
  • 1,000 $0.7040
  • 2,500 $0.6630
  • 5,000 $0.6310
  • 10,000 $0.6020
$0.6020 / $1.5900 Buy Now
Future Electronics N-Channel 40 V 27 A (Ta) 3 W (Ta) SMT Power-Transistor MOSFET - TDSON-8FL RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $0.5600
$0.5600 Buy Now
Rochester Electronics BSC022N04 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 154
  • 1 $0.6685
  • 25 $0.6551
  • 100 $0.6284
  • 500 $0.6017
  • 1,000 $0.5682
$0.5682 / $0.6685 Buy Now
DISTI # SP001720024
EBV Elektronik Transistor MOSFET N-CH 40V 100A 8-Pin TDSON T/R (Alt: SP001720024) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 40V 27A/100A TDSON / N-Channel 40 V 27A (Ta), 100A (Tc) 3W (Ta), 79W (Tc) Surface Mount PG-TDSON-8-1 27400
  • 45 $1.1704
  • 105 $0.9604
  • 165 $0.9304
  • 225 $0.9004
  • 290 $0.8703
  • 385 $0.7803
$0.7803 / $1.1704 Buy Now

Part Details for BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 CAD Models

BSC022N04LS6ATMA1 Part Data Attributes

BSC022N04LS6ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC022N04LS6ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 139A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8FL, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8FL, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 139 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 556 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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