Datasheets
BSC018N04LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC018N04LSGATMA1 by Infineon Technologies AG

Overview of BSC018N04LSGATMA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for BSC018N04LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 60R2476
Newark Mosfet, N Ch, 100A, 40V, Pg-Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0015Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:-, Power Rohs Compliant: Yes |Infineon BSC018N04LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 4737
  • 1 $1.5800
  • 10 $1.3100
  • 100 $1.0500
  • 500 $0.8850
  • 1,000 $0.7510
  • 2,500 $0.7130
$0.7130 / $1.5800 Buy Now
DISTI # BSC018N04LSGATMA1CT-ND
DigiKey MOSFET N-CH 40V 30A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 33601
In Stock
  • 1 $1.0700
  • 10 $0.8890
  • 100 $0.7075
  • 500 $0.6388
  • 5,000 $0.6388
$0.6388 / $1.0700 Buy Now
DISTI # BSC018N04LSGATMA1
Avnet Americas Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018N04LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.6813
  • 10,000 $0.6600
  • 20,000 $0.6387
  • 30,000 $0.6174
  • 40,000 $0.5961
$0.5961 / $0.6813 Buy Now
DISTI # E02:0323_00044105
Arrow Electronics Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Europe - 5000
  • 5,000 $0.5084
$0.5084 Buy Now
DISTI # V72:2272_06383456
Arrow Electronics Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2337 Container: Cut Strips Americas - 4300
  • 1 $1.0562
  • 10 $0.8809
  • 25 $0.8721
  • 100 $0.7038
  • 250 $0.6968
  • 500 $0.6364
  • 1,000 $0.6330
  • 3,000 $0.6264
$0.6264 / $1.0562 Buy Now
Future Electronics Single N-Channel 40 V 1.8 mOhm 113 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.6250
$0.6250 Buy Now
Future Electronics Single N-Channel 40 V 1.8 mOhm 113 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.6250
$0.6250 Buy Now
DISTI # 19806995
Verical Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Americas - 5000
  • 5,000 $0.5129
$0.5129 Buy Now
DISTI # 71289748
Verical Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R Min Qty: 11 Package Multiple: 1 Date Code: 2337 Americas - 4300
  • 11 $0.8809
  • 25 $0.8721
  • 100 $0.7038
  • 250 $0.6968
  • 500 $0.6364
  • 1,000 $0.6330
  • 3,000 $0.6264
$0.6264 / $0.8809 Buy Now
DISTI # BSC018N04LSGATMA1
TME Transistor: N-MOSFET, unipolar, 40V, 100A, 125W, PG-TDSON-8 Min Qty: 1 0
  • 1 $1.1900
  • 5 $1.1100
  • 25 $1.0300
  • 100 $0.9600
$0.9600 / $1.1900 RFQ
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 40V, 100A, 125W, PG-TDSON-8 1381
RFQ
DISTI # SP000388293
EBV Elektronik Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP (Alt: SP000388293) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC018N04LSGATMA1

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BSC018N04LSGATMA1 Part Data Attributes

BSC018N04LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC018N04LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 295 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.0025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC018N04LSGATMA1

This table gives cross-reference parts and alternative options found for BSC018N04LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC018N04LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC018N04LSG Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC018N04LSGATMA1 vs BSC018N04LSG
Part Number Description Manufacturer Compare
TSM020N04LCRRLG Power Field-Effect Transistor, 27A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN56, 8 PIN Taiwan Semiconductor BSC018N04LSGATMA1 vs TSM020N04LCRRLG
BSC018N04LSG Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC018N04LSGATMA1 vs BSC018N04LSG
CSD18512Q5BT 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments BSC018N04LSGATMA1 vs CSD18512Q5BT
CSD18512Q5B 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments BSC018N04LSGATMA1 vs CSD18512Q5B

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