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Transistors / Power Field-Effect Transistors / BSC014NE2LSI
Datasheets
BSC014NE2LSI by: Infineon Technologies AG

Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC014NE2LSI by Infineon Technologies AG

Results Overview of BSC014NE2LSI by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

BSC014NE2LSI Information

BSC014NE2LSI by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC014NE2LSI

Part # Distributor Description Stock Price Buy
DISTI # BSC014NE2LSIATMA1
Avnet Americas Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.4830
$0.4830 Buy Now
DISTI # 726-BSC014NE2LSIXT
Mouser Electronics MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant 9844
  • 1 $1.7700
  • 10 $1.2000
  • 100 $0.9520
  • 500 $0.7920
  • 1,000 $0.6860
  • 2,500 $0.6550
  • 5,000 $0.5440
  • 10,000 $0.5430
$0.5430 / $1.7700 Buy Now
Wuhan P&S 25V,1.4m��,100A,N-Channel Power MOSFET Min Qty: 1 6
  • 1 $0.8600
  • 100 $0.7200
  • 500 $0.6400
  • 1,000 $0.6200
$0.6200 / $0.8600 Buy Now

Part Details for BSC014NE2LSI

BSC014NE2LSI CAD Models

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BSC014NE2LSI Part Data Attributes

Parametric Data
BSC014NE2LSI Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC014NE2LSI Infineon Technologies AG Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.002 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC014NE2LSI

This table gives cross-reference parts and alternative options found for BSC014NE2LSI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC014NE2LSI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC014NE2LSIATMA1 Infineon Technologies AG $0.8405 Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC014NE2LSI vs BSC014NE2LSIATMA1
FDMS2508SDC Fairchild Semiconductor Corporation Check for Price N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL BSC014NE2LSI vs FDMS2508SDC

BSC014NE2LSI Related Parts

BSC014NE2LSI Frequently Asked Questions (FAQ)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider using a thermal sensor to monitor the device temperature.

  • The maximum allowed voltage on the input pins is 5.5V, exceeding this may cause damage to the device. Ensure that the input voltage is within the recommended operating range.

  • Infineon recommends using ESD protection devices, such as TVS diodes, on the input lines to protect the device from electrostatic discharge. Follow the recommended ESD protection circuitry guidelines.

  • The recommended storage temperature range for BSC014NE2LSI is -40°C to 125°C. Storing the device outside this range may affect its reliability and performance.