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Part Details for BSC010N04LSATMA1 by Infineon Technologies AG
Overview of BSC010N04LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC010N04LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y1792
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Newark | Mosfet, N-Ch, 40V, 100A, 150Deg C, 139W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC010N04LSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 150 |
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$1.2200 / $2.3900 | Buy Now |
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DISTI #
BSC010N04LSATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 38A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
25815 In Stock |
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$0.9000 / $2.1500 | Buy Now |
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DISTI #
BSC010N04LSATMA1
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Avnet Americas | Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC010N04LSATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.8400 / $0.9600 | Buy Now |
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DISTI #
50Y1792
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Avnet Americas | Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 50Y1792) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 150 Partner Stock |
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$1.6400 / $2.3900 | Buy Now |
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DISTI #
726-BSC010N04LSATMA1
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Mouser Electronics | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant | 82209 |
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$0.9000 / $2.1500 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1 mOhm 95 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 10000Reel |
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$0.8150 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1 mOhm 95 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.8150 | Buy Now |
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Bristol Electronics | 497 |
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RFQ | ||
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Bristol Electronics | 249 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 40V, 0.0013OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 16 |
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$1.3500 / $1.6875 | Buy Now |
Part Details for BSC010N04LSATMA1
BSC010N04LSATMA1 CAD Models
BSC010N04LSATMA1 Part Data Attributes:
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BSC010N04LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC010N04LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.0013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC010N04LSATMA1
This table gives cross-reference parts and alternative options found for BSC010N04LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC010N04LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC010N04LSTATMA1 | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC010N04LSATMA1 vs BSC010N04LSTATMA1 |