Datasheets
BSC009NE2LSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC009NE2LSATMA1 by Infineon Technologies AG

Overview of BSC009NE2LSATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for BSC009NE2LSATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y1791
Newark Mosfet, N-Ch, 25V, 100A, 150Deg C, 96W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Infineon BSC009NE2LSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $1.8400
  • 10 $1.5700
  • 25 $1.4400
  • 50 $1.2900
  • 100 $1.1500
  • 250 $1.1200
  • 500 $0.9270
  • 1,000 $0.7920
$0.7920 / $1.8400 Buy Now
DISTI # BSC009NE2LSATMA1CT-ND
DigiKey MOSFET N-CH 25V 41A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 48686
In Stock
  • 1 $2.5000
  • 10 $1.6080
  • 100 $1.1016
  • 500 $0.8849
  • 1,000 $0.8152
  • 2,000 $0.7567
  • 5,000 $0.7425
$0.7425 / $2.5000 Buy Now
DISTI # BSC009NE2LSATMA1
Avnet Americas Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Tape and Reel (Alt: BSC009NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-BSC009NE2LSATMA
Mouser Electronics MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant 7481
  • 1 $1.7700
  • 10 $1.3700
  • 100 $0.9880
  • 500 $0.8110
  • 1,000 $0.7430
  • 5,000 $0.7420
$0.7420 / $1.7700 Buy Now
Future Electronics N-Channel 25 V 0.9 mOhm OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Not Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 5000
Reel
  • 5,000 $0.4900
$0.4900 Buy Now
Future Electronics N-Channel 25 V 0.9 mOhm OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Not Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 5000
Reel
  • 5,000 $0.7300
$0.7300 Buy Now
DISTI # 32759123
Verical Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R Min Qty: 43 Package Multiple: 1 Americas - 5000
  • 43 $0.7425
  • 50 $0.7400
  • 100 $0.7388
  • 200 $0.7250
  • 500 $0.7237
  • 1,000 $0.7225
$0.7225 / $0.7425 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 25V, 0.0012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 144
  • 1 $2.4600
  • 50 $1.3530
  • 112 $1.2300
$1.2300 / $2.4600 Buy Now
DISTI # C1S322000267756
Chip1Stop Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 5000
  • 1 $0.6430
  • 10 $0.6140
  • 50 $0.6120
  • 100 $0.6110
  • 200 $0.6000
  • 500 $0.5990
  • 1,000 $0.5970
  • 2,000 $0.5950
  • 5,000 $0.5780
$0.5780 / $0.6430 Buy Now
DISTI # SP000893362
EBV Elektronik Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP (Alt: SP000893362) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC009NE2LSATMA1

BSC009NE2LSATMA1 CAD Models

BSC009NE2LSATMA1 Part Data Attributes

BSC009NE2LSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC009NE2LSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 820 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC009NE2LSATMA1

This table gives cross-reference parts and alternative options found for BSC009NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC009NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDMS2504SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL Fairchild Semiconductor Corporation BSC009NE2LSATMA1 vs FDMS2504SDC
FDMS2502SDC Power Field-Effect Transistor, 43A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 Fairchild Semiconductor Corporation BSC009NE2LSATMA1 vs FDMS2502SDC
BSB012NE2LX Power Field-Effect Transistor, 39A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2 Infineon Technologies AG BSC009NE2LSATMA1 vs BSB012NE2LX
BSC009NE2LS Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC009NE2LSATMA1 vs BSC009NE2LS

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