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Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1791
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Newark | Mosfet, N-Ch, 25V, 100A, 150Deg C, 96W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Infineon BSC009NE2LSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7920 / $1.8400 | Buy Now |
DISTI #
BSC009NE2LSATMA1CT-ND
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DigiKey | MOSFET N-CH 25V 41A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
48686 In Stock |
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$0.7425 / $2.5000 | Buy Now |
DISTI #
BSC009NE2LSATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Tape and Reel (Alt: BSC009NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
726-BSC009NE2LSATMA
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Mouser Electronics | MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 7481 |
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$0.7420 / $1.7700 | Buy Now |
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Future Electronics | N-Channel 25 V 0.9 mOhm OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Not Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.4900 | Buy Now |
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Future Electronics | N-Channel 25 V 0.9 mOhm OptiMOS™ Power-MOSFET - PG-TDSON-8 RoHS: Not Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.7300 | Buy Now |
DISTI #
32759123
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Verical | Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R Min Qty: 43 Package Multiple: 1 | Americas - 5000 |
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$0.7225 / $0.7425 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 25V, 0.0012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 144 |
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$1.2300 / $2.4600 | Buy Now |
DISTI #
C1S322000267756
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Chip1Stop | Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape | 5000 |
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$0.5780 / $0.6430 | Buy Now |
DISTI #
SP000893362
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EBV Elektronik | Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP (Alt: SP000893362) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BSC009NE2LSATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC009NE2LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 820 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC009NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC009NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDMS2504SDC | N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL | Fairchild Semiconductor Corporation | BSC009NE2LSATMA1 vs FDMS2504SDC |
FDMS2502SDC | Power Field-Effect Transistor, 43A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 | Fairchild Semiconductor Corporation | BSC009NE2LSATMA1 vs FDMS2502SDC |
BSB012NE2LX | Power Field-Effect Transistor, 39A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2 | Infineon Technologies AG | BSC009NE2LSATMA1 vs BSB012NE2LX |
BSC009NE2LS | Power Field-Effect Transistor, 41A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC009NE2LSATMA1 vs BSC009NE2LS |