Part Details for BSB280N15NZ3GXUMA1 by Infineon Technologies AG
Overview of BSB280N15NZ3GXUMA1 by Infineon Technologies AG
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Applications
Energy and Power Systems
Renewable Energy
Part Details for BSB280N15NZ3GXUMA1
BSB280N15NZ3GXUMA1 CAD Models
BSB280N15NZ3GXUMA1 Part Data Attributes
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BSB280N15NZ3GXUMA1
Infineon Technologies AG
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Datasheet
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BSB280N15NZ3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, METAL, WDSON-2, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Finish | Silver/Nickel (Ag/Ni) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |