-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSB165N15NZ3GXUMA1 by Infineon Technologies AG
Overview of BSB165N15NZ3GXUMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for BSB165N15NZ3GXUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
50Y1790
|
Newark | Mosfet Transistor, N Channel, 45 A, 150 V, 0.0131 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon BSB165N15NZ3GXUMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$1.7300 | Buy Now |
|
DISTI #
2156-BSB165N15NZ3GXUMA1-ND
|
DigiKey | MOSFET N-CH 150V 9A/45A 2WDSON Min Qty: 1 Lead time: 22 Weeks Container: Bulk MARKETPLACE PRODUCT |
8786 In Stock |
|
$1.3400 | Buy Now |
|
DISTI #
BSB165N15NZ3GXUMA1CT-ND
|
DigiKey | MOSFET N-CH 150V 9A/45A 2WDSON Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
|
$1.6647 / $3.5600 | Buy Now |
|
DISTI #
BSB165N15NZ3GXUMA1
|
Avnet Americas | Trans MOSFET N-CH 150V 9A CanPAK T/R - Tape and Reel (Alt: BSB165N15NZ3GXUMA1) RoHS: Compliant Min Qty: 271 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 8786 Partner Stock |
|
$1.1500 / $1.3500 | Buy Now |
|
|
Future Electronics | Single N-Channel 150 V 16.5 mOhm 26 nC OptiMOS™ Power Mosfet - MG-WDSON-2 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$1.1300 | Buy Now |
|
|
Future Electronics | Single N-Channel 150 V 16.5 mOhm 26 nC OptiMOS™ Power Mosfet - MG-WDSON-2 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$1.1300 | Buy Now |
|
|
Rochester Electronics | BSB165N15 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4012 |
|
$1.1500 / $1.3500 | Buy Now |
|
DISTI #
SP000617000
|
EBV Elektronik | Trans MOSFET N-CH 150V 9A CanPAK T/R (Alt: SP000617000) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for BSB165N15NZ3GXUMA1
BSB165N15NZ3GXUMA1 CAD Models
BSB165N15NZ3GXUMA1 Part Data Attributes
|
|
BSB165N15NZ3GXUMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSB165N15NZ3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 150V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, METAL, WDSON-2, CANPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 440 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.0165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Silver/Nickel (Ag/Ni) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |