Part Details for BSB028N06NN3GXUMA1 by Infineon Technologies AG
Overview of BSB028N06NN3GXUMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSB028N06NN3GXUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85X4148
|
Newark | Mosfet Transistor, N Channel, 90 A, 60 V, 0.0022 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon BSB028N06NN3GXUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 113 |
|
$1.3100 / $2.5000 | Buy Now |
|
DISTI #
BSB028N06NN3GXUMA1CT-ND
|
DigiKey | MOSFET N-CH 60V 22A/90A 2WDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14243 In Stock |
|
$1.2265 / $2.8300 | Buy Now |
|
DISTI #
BSB028N06NN3GXUMA1
|
Avnet Americas | Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.4705 | Buy Now |
|
DISTI #
V72:2272_06382902
|
Arrow Electronics | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2150 Container: Cut Strips | Americas - 41 |
|
$1.2170 / $1.2580 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS™ Power Mosfet - MG-WDSON-2 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks Container: Reel | 10000Reel |
|
$0.8450 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS™ Power Mosfet - MG-WDSON-2 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$1.2000 | Buy Now |
|
DISTI #
80619861
|
Verical | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Date Code: 2349 | Americas - 200000 |
|
$1.5274 | Buy Now |
|
DISTI #
60426996
|
Verical | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2150 | Americas - 41 |
|
$1.2170 / $1.2580 | Buy Now |
|
DISTI #
57336997
|
Verical | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant Min Qty: 27 Package Multiple: 1 Date Code: 2106 | Americas - 30 |
|
$1.1875 | Buy Now |
|
|
Rochester Electronics | BSB028N06NN3 G - OptiMOS 3 Power-MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 99700 |
|
$1.1800 / $1.3800 | Buy Now |
Part Details for BSB028N06NN3GXUMA1
BSB028N06NN3GXUMA1 CAD Models
BSB028N06NN3GXUMA1 Part Data Attributes
|
|
BSB028N06NN3GXUMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSB028N06NN3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-MBCC-N3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 590 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Silver/Nickel (Ag/Ni) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSB028N06NN3GXUMA1
This table gives cross-reference parts and alternative options found for BSB028N06NN3GXUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB028N06NN3GXUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB026N06N | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | BSB028N06NN3GXUMA1 vs IPB026N06N |
| DMT6004LPS-13 | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSB028N06NN3GXUMA1 vs DMT6004LPS-13 |
| IPB026N06NATMA1 | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | BSB028N06NN3GXUMA1 vs IPB026N06NATMA1 |
| BSC028N06NSTATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSB028N06NN3GXUMA1 vs BSC028N06NSTATMA1 |
| BSC028N06LS3GATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSB028N06NN3GXUMA1 vs BSC028N06LS3GATMA1 |