Datasheets
BM100-28 by:

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6

Part Details for BM100-28 by Advanced Semiconductor Inc

Overview of BM100-28 by Advanced Semiconductor Inc

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Part Details for BM100-28

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BM100-28 Part Data Attributes:

BM100-28 Advanced Semiconductor Inc
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BM100-28 Advanced Semiconductor Inc RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CXFM-F6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection EMITTER
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 33 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CXFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 270 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position UNSPECIFIED
Transistor Element Material SILICON

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