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Transistors / RF Power Bipolar Transistors / BLV31
Datasheets
BLV31 by:
Advanced Semiconductor Inc
Advanced Semiconductor Inc
New Jersey Semiconductor Products Inc
North American Philips Discrete Products Div
NXP Semiconductors
Pacific Monolithics
Philips Semiconductors
Richardson Electronics Ltd
Not Found

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,

Part Details for BLV31 by Advanced Semiconductor Inc

Results Overview of BLV31 by Advanced Semiconductor Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics

BLV31 Information

BLV31 by Advanced Semiconductor Inc is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BLV31

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BLV31 Part Data Attributes

Parametric Data
BLV31 Advanced Semiconductor Inc
Buy Now Datasheet
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BLV31 Advanced Semiconductor Inc RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,
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Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 30 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 48 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLV31

This table gives cross-reference parts and alternative options found for BLV31. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLV31, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TVV005 Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, BLV31 vs TVV005
BLV31 NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power BLV31 vs BLV31
Part Number Manufacturer Composite Price Description Compare
PT9732 Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 BLV31 vs PT9732
SD1018 Microsemi Corporation Check for Price RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M135, 4 PIN BLV31 vs SD1018
2N5642 STMicroelectronics Check for Price VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.380 INCH, STUD PACKAGE-4 BLV31 vs 2N5642
SD1732(TDS595) STMicroelectronics Check for Price 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.250 X 0.320 INCH, PLASTIC, M156, 4 PIN BLV31 vs SD1732(TDS595)
MRF314A MACOM Check for Price RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, BLV31 vs MRF314A
BLY91C Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, BLV31 vs BLY91C
MS1505 Microsemi Corporation Check for Price RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M113, 4 PIN BLV31 vs MS1505
2N3375 Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, ISOLATED TO-60, 3 PIN BLV31 vs 2N3375
TPV593 Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, BLV31 vs TPV593
TPV595A Advanced Semiconductor Inc Check for Price RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4 BLV31 vs TPV595A

BLV31 Frequently Asked Questions (FAQ)

  • Advanced Semiconductor Inc recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern around the device's thermal pad to ensure efficient heat dissipation.

  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal coupling between the device and the heat sink or PCB.

  • Advanced Semiconductor Inc recommends a soldering profile with a peak temperature of 260°C, a dwell time of 30-60 seconds, and a ramp rate of 3°C/second to prevent thermal shock and ensure reliable solder joints.

  • Yes, the BLV31 can be used in switching regulator applications, but it is essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is limited to 100 kHz or less to prevent excessive power losses.

  • To protect the BLV31 from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is stored in an anti-static package or bag.