Part Details for BLS6G3135-120,112 by Ampleon
Overview of BLS6G3135-120,112 by Ampleon
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BLS6G3135-120,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2902
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Newark | N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B, Drain Source Voltage Vds:32V, Continuous Drain Current Id:7.2A, Power Dissipation:120W, Operating Frequency Min:3.1Ghz, Operating Frequency Max:3.5Ghz, Msl:- Rohs Compliant: Yes |Ampleon BLS6G3135-120,112 Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLS6G3135-120,112
BLS6G3135-120,112 CAD Models
BLS6G3135-120,112 Part Data Attributes
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BLS6G3135-120,112
Ampleon
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Datasheet
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Compare Parts:
BLS6G3135-120,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 7.2 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLS6G3135-120,112
This table gives cross-reference parts and alternative options found for BLS6G3135-120,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLS6G3135-120,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| BLS6G3135-120 | TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLS6G3135-120,112 vs BLS6G3135-120 |